JPS57171840A - Driving circuit - Google Patents

Driving circuit

Info

Publication number
JPS57171840A
JPS57171840A JP56057581A JP5758181A JPS57171840A JP S57171840 A JPS57171840 A JP S57171840A JP 56057581 A JP56057581 A JP 56057581A JP 5758181 A JP5758181 A JP 5758181A JP S57171840 A JPS57171840 A JP S57171840A
Authority
JP
Japan
Prior art keywords
signal
circuit
bootstrap
execute
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56057581A
Other languages
English (en)
Inventor
Makoto Segawa
Shiyouji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56057581A priority Critical patent/JPS57171840A/ja
Priority to EP82103140A priority patent/EP0063357B1/en
Priority to DE8282103140T priority patent/DE3267243D1/de
Publication of JPS57171840A publication Critical patent/JPS57171840A/ja
Priority to US06/709,360 priority patent/US4549102A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
JP56057581A 1981-04-16 1981-04-16 Driving circuit Pending JPS57171840A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56057581A JPS57171840A (en) 1981-04-16 1981-04-16 Driving circuit
EP82103140A EP0063357B1 (en) 1981-04-16 1982-04-14 Drive circuit
DE8282103140T DE3267243D1 (en) 1981-04-16 1982-04-14 Drive circuit
US06/709,360 US4549102A (en) 1981-04-16 1985-03-08 Driver circuit having a bootstrap buffer circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56057581A JPS57171840A (en) 1981-04-16 1981-04-16 Driving circuit

Publications (1)

Publication Number Publication Date
JPS57171840A true JPS57171840A (en) 1982-10-22

Family

ID=13059812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56057581A Pending JPS57171840A (en) 1981-04-16 1981-04-16 Driving circuit

Country Status (4)

Country Link
US (1) US4549102A (ja)
EP (1) EP0063357B1 (ja)
JP (1) JPS57171840A (ja)
DE (1) DE3267243D1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144790A (ja) * 1984-12-18 1986-07-02 Sharp Corp アドレスデコ−ダ回路
JP2012042961A (ja) * 2011-08-31 2012-03-01 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2013168965A (ja) * 2013-03-21 2013-08-29 Semiconductor Energy Lab Co Ltd 半導体装置
US8659532B2 (en) 2001-04-27 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2018170780A (ja) * 2018-06-15 2018-11-01 株式会社半導体エネルギー研究所 電子機器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147883A (ja) * 1982-02-26 1983-09-02 Toshiba Corp スタテイツク型ブ−トストラツプ回路を備えた半導体集積回路
EP0187375B1 (en) * 1984-12-25 1991-07-31 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP2598081B2 (ja) * 1988-05-16 1997-04-09 株式会社東芝 半導体メモリ
JP2004079843A (ja) * 2002-08-20 2004-03-11 Renesas Technology Corp 半導体記憶装置
US8928647B2 (en) 2011-03-04 2015-01-06 Sony Corporation Inverter circuit and display unit
JP5589903B2 (ja) * 2011-03-04 2014-09-17 ソニー株式会社 インバータ回路および表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013902A (en) * 1975-08-06 1977-03-22 Honeywell Inc. Initial reset signal generator and low voltage detector
DE2553517C3 (de) * 1975-11-28 1978-12-07 Ibm Deutschland Gmbh, 7000 Stuttgart Verzögerungsschaltung mit Feldeffekttransistoren
JPS52119160A (en) * 1976-03-31 1977-10-06 Nec Corp Semiconductor circuit with insulating gate type field dffect transisto r
US4069429A (en) * 1976-09-13 1978-01-17 Harris Corporation IGFET clock generator
JPS6023432B2 (ja) * 1977-12-09 1985-06-07 株式会社日立製作所 Ｍｏｓメモリ
US4447895A (en) * 1979-10-04 1984-05-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置
JPS5842558B2 (ja) * 1980-02-16 1983-09-20 富士通株式会社 アドレス バッファ回路
US4385369A (en) * 1981-08-21 1983-05-24 Mostek Corporation Semiconductor memory address buffer having power down mode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144790A (ja) * 1984-12-18 1986-07-02 Sharp Corp アドレスデコ−ダ回路
US8659532B2 (en) 2001-04-27 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9136385B2 (en) 2001-04-27 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012042961A (ja) * 2011-08-31 2012-03-01 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP2013168965A (ja) * 2013-03-21 2013-08-29 Semiconductor Energy Lab Co Ltd 半導体装置
JP2018170780A (ja) * 2018-06-15 2018-11-01 株式会社半導体エネルギー研究所 電子機器

Also Published As

Publication number Publication date
EP0063357A2 (en) 1982-10-27
US4549102A (en) 1985-10-22
EP0063357A3 (en) 1983-02-16
EP0063357B1 (en) 1985-11-06
DE3267243D1 (en) 1985-12-12

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