DE3267243D1 - Drive circuit - Google Patents

Drive circuit

Info

Publication number
DE3267243D1
DE3267243D1 DE8282103140T DE3267243T DE3267243D1 DE 3267243 D1 DE3267243 D1 DE 3267243D1 DE 8282103140 T DE8282103140 T DE 8282103140T DE 3267243 T DE3267243 T DE 3267243T DE 3267243 D1 DE3267243 D1 DE 3267243D1
Authority
DE
Germany
Prior art keywords
drive circuit
drive
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282103140T
Other languages
English (en)
Inventor
Makoto Segawa
Shoji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3267243D1 publication Critical patent/DE3267243D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
DE8282103140T 1981-04-16 1982-04-14 Drive circuit Expired DE3267243D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56057581A JPS57171840A (en) 1981-04-16 1981-04-16 Driving circuit

Publications (1)

Publication Number Publication Date
DE3267243D1 true DE3267243D1 (en) 1985-12-12

Family

ID=13059812

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282103140T Expired DE3267243D1 (en) 1981-04-16 1982-04-14 Drive circuit

Country Status (4)

Country Link
US (1) US4549102A (de)
EP (1) EP0063357B1 (de)
JP (1) JPS57171840A (de)
DE (1) DE3267243D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147883A (ja) * 1982-02-26 1983-09-02 Toshiba Corp スタテイツク型ブ−トストラツプ回路を備えた半導体集積回路
JPS61144790A (ja) * 1984-12-18 1986-07-02 Sharp Corp アドレスデコ−ダ回路
US4805150A (en) * 1984-12-25 1989-02-14 Kabushiki Kaisha Toshiba Programmable semiconductor memory device having grouped high voltage supply circuits for writing data
JP2598081B2 (ja) * 1988-05-16 1997-04-09 株式会社東芝 半導体メモリ
JP4785271B2 (ja) 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP2004079843A (ja) * 2002-08-20 2004-03-11 Renesas Technology Corp 半導体記憶装置
JP5589903B2 (ja) * 2011-03-04 2014-09-17 ソニー株式会社 インバータ回路および表示装置
US8928647B2 (en) 2011-03-04 2015-01-06 Sony Corporation Inverter circuit and display unit
JP2012042961A (ja) * 2011-08-31 2012-03-01 Semiconductor Energy Lab Co Ltd 半導体装置及び電子機器
JP5493023B2 (ja) * 2013-03-21 2014-05-14 株式会社半導体エネルギー研究所 表示装置
JP6628837B2 (ja) * 2018-06-15 2020-01-15 株式会社半導体エネルギー研究所 電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013902A (en) * 1975-08-06 1977-03-22 Honeywell Inc. Initial reset signal generator and low voltage detector
DE2553517C3 (de) * 1975-11-28 1978-12-07 Ibm Deutschland Gmbh, 7000 Stuttgart Verzögerungsschaltung mit Feldeffekttransistoren
JPS52119160A (en) * 1976-03-31 1977-10-06 Nec Corp Semiconductor circuit with insulating gate type field dffect transisto r
US4069429A (en) * 1976-09-13 1978-01-17 Harris Corporation IGFET clock generator
JPS6023432B2 (ja) * 1977-12-09 1985-06-07 株式会社日立製作所 Ｍｏｓメモリ
US4447895A (en) * 1979-10-04 1984-05-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置
JPS5842558B2 (ja) * 1980-02-16 1983-09-20 富士通株式会社 アドレス バッファ回路
US4385369A (en) * 1981-08-21 1983-05-24 Mostek Corporation Semiconductor memory address buffer having power down mode

Also Published As

Publication number Publication date
EP0063357B1 (de) 1985-11-06
JPS57171840A (en) 1982-10-22
US4549102A (en) 1985-10-22
EP0063357A3 (en) 1983-02-16
EP0063357A2 (de) 1982-10-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee