JPS57170520A - High-pressure cylinder for fabrication of semiconductor film and its application - Google Patents

High-pressure cylinder for fabrication of semiconductor film and its application

Info

Publication number
JPS57170520A
JPS57170520A JP56055392A JP5539281A JPS57170520A JP S57170520 A JPS57170520 A JP S57170520A JP 56055392 A JP56055392 A JP 56055392A JP 5539281 A JP5539281 A JP 5539281A JP S57170520 A JPS57170520 A JP S57170520A
Authority
JP
Japan
Prior art keywords
pressure cylinder
silan
gas
reaction tube
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56055392A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318856B2 (OSRAM
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56055392A priority Critical patent/JPS57170520A/ja
Publication of JPS57170520A publication Critical patent/JPS57170520A/ja
Publication of JPS6318856B2 publication Critical patent/JPS6318856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3408—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H10P14/24—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP56055392A 1981-04-13 1981-04-13 High-pressure cylinder for fabrication of semiconductor film and its application Granted JPS57170520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56055392A JPS57170520A (en) 1981-04-13 1981-04-13 High-pressure cylinder for fabrication of semiconductor film and its application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56055392A JPS57170520A (en) 1981-04-13 1981-04-13 High-pressure cylinder for fabrication of semiconductor film and its application

Publications (2)

Publication Number Publication Date
JPS57170520A true JPS57170520A (en) 1982-10-20
JPS6318856B2 JPS6318856B2 (OSRAM) 1988-04-20

Family

ID=12997241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56055392A Granted JPS57170520A (en) 1981-04-13 1981-04-13 High-pressure cylinder for fabrication of semiconductor film and its application

Country Status (1)

Country Link
JP (1) JPS57170520A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989409A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応用反応性気体
JPS5989410A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989409A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応用反応性気体
JPS5989410A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応方法

Also Published As

Publication number Publication date
JPS6318856B2 (OSRAM) 1988-04-20

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