JPS57166079A - Method of producing semiconductor integrated circuit - Google Patents

Method of producing semiconductor integrated circuit

Info

Publication number
JPS57166079A
JPS57166079A JP56198690A JP19869081A JPS57166079A JP S57166079 A JPS57166079 A JP S57166079A JP 56198690 A JP56198690 A JP 56198690A JP 19869081 A JP19869081 A JP 19869081A JP S57166079 A JPS57166079 A JP S57166079A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
producing semiconductor
producing
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56198690A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0159735B2 (https=
Inventor
Nagarajiyan Arunachiyara
Gasutaji Saakarii Homi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57166079A publication Critical patent/JPS57166079A/ja
Publication of JPH0159735B2 publication Critical patent/JPH0159735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP56198690A 1981-03-30 1981-12-11 Method of producing semiconductor integrated circuit Granted JPS57166079A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/249,260 US4397079A (en) 1981-03-30 1981-03-30 Process for improving the yield of integrated devices including Schottky barrier diodes

Publications (2)

Publication Number Publication Date
JPS57166079A true JPS57166079A (en) 1982-10-13
JPH0159735B2 JPH0159735B2 (https=) 1989-12-19

Family

ID=22942692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56198690A Granted JPS57166079A (en) 1981-03-30 1981-12-11 Method of producing semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US4397079A (https=)
EP (1) EP0061700B1 (https=)
JP (1) JPS57166079A (https=)
DE (1) DE3265730D1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667395A (en) * 1985-03-29 1987-05-26 International Business Machines Corporation Method for passivating an undercut in semiconductor device preparation
GB9609641D0 (en) * 1996-05-09 1996-07-10 Pfizer Ltd Compounds useful in therapy
US6096629A (en) * 1998-11-05 2000-08-01 Taiwan Semiconductor Manufacturing Company Uniform sidewall profile etch method for forming low contact leakage schottky diode contact
US8435873B2 (en) * 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US10003014B2 (en) * 2014-06-20 2018-06-19 International Business Machines Corporation Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching
US11349010B2 (en) * 2019-12-30 2022-05-31 Taiwan Semiconductor Manufacturing Company Ltd. Schottky barrier diode with reduced leakage current and method of forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526616A (en) * 1978-08-11 1980-02-26 Nippon Electric Co Variable resistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3574014A (en) * 1967-07-24 1971-04-06 Frances Hugle Masking technique for selective etching
US4028155A (en) * 1974-02-28 1977-06-07 Lfe Corporation Process and material for manufacturing thin film integrated circuits
DE2529598C3 (de) * 1975-07-02 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren
US4056642A (en) * 1976-05-14 1977-11-01 Data General Corporation Method of fabricating metal-semiconductor interfaces
US4040891A (en) * 1976-06-30 1977-08-09 Ibm Corporation Etching process utilizing the same positive photoresist layer for two etching steps
FR2376904A1 (fr) * 1977-01-11 1978-08-04 Alsthom Atlantique Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma
US4110125A (en) * 1977-03-03 1978-08-29 International Business Machines Corporation Method for fabricating semiconductor devices
US4135998A (en) * 1978-04-26 1979-01-23 International Business Machines Corp. Method for forming pt-si schottky barrier contact

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526616A (en) * 1978-08-11 1980-02-26 Nippon Electric Co Variable resistor

Also Published As

Publication number Publication date
JPH0159735B2 (https=) 1989-12-19
US4397079A (en) 1983-08-09
EP0061700B1 (en) 1985-08-28
EP0061700A3 (en) 1983-02-16
DE3265730D1 (en) 1985-10-03
EP0061700A2 (en) 1982-10-06

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