JPH0159735B2 - - Google Patents
Info
- Publication number
- JPH0159735B2 JPH0159735B2 JP56198690A JP19869081A JPH0159735B2 JP H0159735 B2 JPH0159735 B2 JP H0159735B2 JP 56198690 A JP56198690 A JP 56198690A JP 19869081 A JP19869081 A JP 19869081A JP H0159735 B2 JPH0159735 B2 JP H0159735B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- opening
- protective layer
- active region
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
- H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/249,260 US4397079A (en) | 1981-03-30 | 1981-03-30 | Process for improving the yield of integrated devices including Schottky barrier diodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57166079A JPS57166079A (en) | 1982-10-13 |
| JPH0159735B2 true JPH0159735B2 (https=) | 1989-12-19 |
Family
ID=22942692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56198690A Granted JPS57166079A (en) | 1981-03-30 | 1981-12-11 | Method of producing semiconductor integrated circuit |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4397079A (https=) |
| EP (1) | EP0061700B1 (https=) |
| JP (1) | JPS57166079A (https=) |
| DE (1) | DE3265730D1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4667395A (en) * | 1985-03-29 | 1987-05-26 | International Business Machines Corporation | Method for passivating an undercut in semiconductor device preparation |
| GB9609641D0 (en) * | 1996-05-09 | 1996-07-10 | Pfizer Ltd | Compounds useful in therapy |
| US6096629A (en) * | 1998-11-05 | 2000-08-01 | Taiwan Semiconductor Manufacturing Company | Uniform sidewall profile etch method for forming low contact leakage schottky diode contact |
| US8435873B2 (en) * | 2006-06-08 | 2013-05-07 | Texas Instruments Incorporated | Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
| US10003014B2 (en) * | 2014-06-20 | 2018-06-19 | International Business Machines Corporation | Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching |
| US11349010B2 (en) * | 2019-12-30 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company Ltd. | Schottky barrier diode with reduced leakage current and method of forming the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3574014A (en) * | 1967-07-24 | 1971-04-06 | Frances Hugle | Masking technique for selective etching |
| US4028155A (en) * | 1974-02-28 | 1977-06-07 | Lfe Corporation | Process and material for manufacturing thin film integrated circuits |
| DE2529598C3 (de) * | 1975-07-02 | 1978-05-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit bipolaren Transistoren |
| US4056642A (en) * | 1976-05-14 | 1977-11-01 | Data General Corporation | Method of fabricating metal-semiconductor interfaces |
| US4040891A (en) * | 1976-06-30 | 1977-08-09 | Ibm Corporation | Etching process utilizing the same positive photoresist layer for two etching steps |
| FR2376904A1 (fr) * | 1977-01-11 | 1978-08-04 | Alsthom Atlantique | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
| US4110125A (en) * | 1977-03-03 | 1978-08-29 | International Business Machines Corporation | Method for fabricating semiconductor devices |
| US4135998A (en) * | 1978-04-26 | 1979-01-23 | International Business Machines Corp. | Method for forming pt-si schottky barrier contact |
| JPS5526616A (en) * | 1978-08-11 | 1980-02-26 | Nippon Electric Co | Variable resistor |
-
1981
- 1981-03-30 US US06/249,260 patent/US4397079A/en not_active Expired - Lifetime
- 1981-12-11 JP JP56198690A patent/JPS57166079A/ja active Granted
-
1982
- 1982-03-23 EP EP82102406A patent/EP0061700B1/en not_active Expired
- 1982-03-23 DE DE8282102406T patent/DE3265730D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4397079A (en) | 1983-08-09 |
| EP0061700B1 (en) | 1985-08-28 |
| EP0061700A3 (en) | 1983-02-16 |
| JPS57166079A (en) | 1982-10-13 |
| DE3265730D1 (en) | 1985-10-03 |
| EP0061700A2 (en) | 1982-10-06 |
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