JPS57166064A - Capacity adjusting method for thick film hybrid ic - Google Patents
Capacity adjusting method for thick film hybrid icInfo
- Publication number
- JPS57166064A JPS57166064A JP56050637A JP5063781A JPS57166064A JP S57166064 A JPS57166064 A JP S57166064A JP 56050637 A JP56050637 A JP 56050637A JP 5063781 A JP5063781 A JP 5063781A JP S57166064 A JPS57166064 A JP S57166064A
- Authority
- JP
- Japan
- Prior art keywords
- capacity
- thick film
- capacity adjusting
- patterns
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/013—Thick-film circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
PURPOSE:To ease capacity adjusting and realize a thick film hybrid IC with a wide range capacity adjustment feature by a method wherein at least the capacity adjusting means in a thick film capacitor is constituted of a pair of patterned resistors which are subjected to trimming. CONSTITUTION:A pair of electrode patterns 7 and 8 is provided on a ceramic substrate 1 and, further, a pair of resistor patterns 9 and 10 is provided composed of an Ru oxide glass to be connected as a capacity adjusting means for a capacitor to the electrode patterns 7 and 8. Next, at least one of the resistor patterns 9 and 10 located opposite to each other are abraded by the sand blast method for the adjustment of the capacity between the two patterns 9 and 10. The parts contributing to capacity adjustment composed of an Ru oxide glass weak in its adhesion to a ceramic substrate, trimming is performed with ease and precision and no migration is expected to run into the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56050637A JPS57166064A (en) | 1981-04-06 | 1981-04-06 | Capacity adjusting method for thick film hybrid ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56050637A JPS57166064A (en) | 1981-04-06 | 1981-04-06 | Capacity adjusting method for thick film hybrid ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57166064A true JPS57166064A (en) | 1982-10-13 |
Family
ID=12864467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56050637A Pending JPS57166064A (en) | 1981-04-06 | 1981-04-06 | Capacity adjusting method for thick film hybrid ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57166064A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050657A (en) * | 1973-09-08 | 1975-05-07 | ||
JPS55105322A (en) * | 1979-01-26 | 1980-08-12 | Siemens Ag | Rc circuit network and method of correcting same |
-
1981
- 1981-04-06 JP JP56050637A patent/JPS57166064A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5050657A (en) * | 1973-09-08 | 1975-05-07 | ||
JPS55105322A (en) * | 1979-01-26 | 1980-08-12 | Siemens Ag | Rc circuit network and method of correcting same |
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