JPS57160181A - Light amplifying semiconductor device - Google Patents

Light amplifying semiconductor device

Info

Publication number
JPS57160181A
JPS57160181A JP4503281A JP4503281A JPS57160181A JP S57160181 A JPS57160181 A JP S57160181A JP 4503281 A JP4503281 A JP 4503281A JP 4503281 A JP4503281 A JP 4503281A JP S57160181 A JPS57160181 A JP S57160181A
Authority
JP
Japan
Prior art keywords
light
constitution
bias
detecting part
light detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4503281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244833B2 (enExample
Inventor
Akio Sasaki
Kunishige Oe
Masaaki Kuzuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4503281A priority Critical patent/JPS57160181A/ja
Publication of JPS57160181A publication Critical patent/JPS57160181A/ja
Publication of JPS6244833B2 publication Critical patent/JPS6244833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP4503281A 1981-03-27 1981-03-27 Light amplifying semiconductor device Granted JPS57160181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4503281A JPS57160181A (en) 1981-03-27 1981-03-27 Light amplifying semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4503281A JPS57160181A (en) 1981-03-27 1981-03-27 Light amplifying semiconductor device

Publications (2)

Publication Number Publication Date
JPS57160181A true JPS57160181A (en) 1982-10-02
JPS6244833B2 JPS6244833B2 (enExample) 1987-09-22

Family

ID=12707993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4503281A Granted JPS57160181A (en) 1981-03-27 1981-03-27 Light amplifying semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160181A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037181A (ja) * 1983-08-10 1985-02-26 Agency Of Ind Science & Technol 発光素子
JPS62281381A (ja) * 1986-05-29 1987-12-07 Mitsubishi Cable Ind Ltd 光半導体素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037181A (ja) * 1983-08-10 1985-02-26 Agency Of Ind Science & Technol 発光素子
JPS62281381A (ja) * 1986-05-29 1987-12-07 Mitsubishi Cable Ind Ltd 光半導体素子

Also Published As

Publication number Publication date
JPS6244833B2 (enExample) 1987-09-22

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