JPS57160176A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS57160176A JPS57160176A JP56152617A JP15261781A JPS57160176A JP S57160176 A JPS57160176 A JP S57160176A JP 56152617 A JP56152617 A JP 56152617A JP 15261781 A JP15261781 A JP 15261781A JP S57160176 A JPS57160176 A JP S57160176A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- layer
- photoelectric converter
- enlarging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To transmit infrared rays to prevent self-exothermicity, by enlarging the energy band width of a semiconductor layer on side of luminous irradiation with semi-amorphous structure of an I type semiconductor layer. CONSTITUTION:A photoelectric converter is constituted of a phototransmitting substrate 15, a photo-transmitting electrode 16, a photo-transmitting back surface electrode 19, an I type semiconductor layer 20, a P type semiconductor layer 22 and an N type semiconductor layer 23. By enlarging the energy band width of the layer 22 on the side of luminous irradiation larger than that of the layer 20 with semi-amorphous structure of the layer 20 having micro-crystallinity, the transmittance of infrared rays is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56152617A JPS57160176A (en) | 1981-09-26 | 1981-09-26 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56152617A JPS57160176A (en) | 1981-09-26 | 1981-09-26 | Photoelectric converter |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56045888A Division JPS57160175A (en) | 1981-03-28 | 1981-03-28 | Photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57160176A true JPS57160176A (en) | 1982-10-02 |
Family
ID=15544289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56152617A Pending JPS57160176A (en) | 1981-09-26 | 1981-09-26 | Photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57160176A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6030180A (en) * | 1983-07-28 | 1985-02-15 | Matsushita Electric Ind Co Ltd | Amorphous thin film photovoltaic element |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54163693A (en) * | 1978-10-23 | 1979-12-26 | Yamazaki Shunpei | Semiconductor device for photovoltaic power generation |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
JPS56152617A (en) * | 1980-03-26 | 1981-11-26 | James Dyson | Vacuum cleaner |
-
1981
- 1981-09-26 JP JP56152617A patent/JPS57160176A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54163693A (en) * | 1978-10-23 | 1979-12-26 | Yamazaki Shunpei | Semiconductor device for photovoltaic power generation |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
JPS56152617A (en) * | 1980-03-26 | 1981-11-26 | James Dyson | Vacuum cleaner |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6030180A (en) * | 1983-07-28 | 1985-02-15 | Matsushita Electric Ind Co Ltd | Amorphous thin film photovoltaic element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2029096B (en) | Semiconductor devices | |
JPS57160175A (en) | Photoelectric converter | |
JPS57160176A (en) | Photoelectric converter | |
JPS5427786A (en) | Integrated light source | |
JPS542683A (en) | Semiconductor chip | |
JPS53136987A (en) | Photo diode | |
JPS52100982A (en) | Semiconductor device | |
JPS52124241A (en) | Solar light abosrbing surface | |
JPS525026A (en) | Solar heat absorbent | |
JPS548982A (en) | Semiconductor device | |
JPS5376692A (en) | Semiconductor light emitting device | |
JPS53137686A (en) | Semiconductor laser unit | |
JPS5420437A (en) | Solar light absorption surface | |
JPS5331236A (en) | Infrared bulb for medical use | |
JPS5296430A (en) | Optical thermal converter and production thereof | |
JPS53110332A (en) | Photoelectric converter for original | |
JPS51117591A (en) | Semiconductor photoelectric conversion element | |
JPS5394775A (en) | Manufacture of semiconductor device | |
JPS5387676A (en) | Semiconductor control rectifier | |
JPS52105786A (en) | Semiconductor device | |
JPS5299441A (en) | Solar heat heat focussing surface and its manufacturing method | |
JPS6486572A (en) | Amorphous thin film light emitting element | |
JPS5413284A (en) | Semiconductor light emitting device | |
JPS5717186A (en) | Multifunctional diode | |
JPS5422766A (en) | Semiconductor element |