JPS57158093A - Read-only memory semiconductor device - Google Patents

Read-only memory semiconductor device

Info

Publication number
JPS57158093A
JPS57158093A JP4291881A JP4291881A JPS57158093A JP S57158093 A JPS57158093 A JP S57158093A JP 4291881 A JP4291881 A JP 4291881A JP 4291881 A JP4291881 A JP 4291881A JP S57158093 A JPS57158093 A JP S57158093A
Authority
JP
Japan
Prior art keywords
data
line
thick
insulating film
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4291881A
Other languages
Japanese (ja)
Other versions
JPS6152557B2 (en
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4291881A priority Critical patent/JPS57158093A/en
Publication of JPS57158093A publication Critical patent/JPS57158093A/en
Publication of JPS6152557B2 publication Critical patent/JPS6152557B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Abstract

PURPOSE:To reduce the capacity of a line, perform operation at high speed and reduce power consumption by setting the gate insulating film of a memory cell storing more data out of the memory cells connected in the same line, to be thick. CONSTITUTION:A semiconductor read-only memory device stores the binary status of data by changing the capacity of threshold voltage by setting the thickness of a gate insulating film in each memory cell MC6 consisting of an insulation gate type field effect transistor (FET). Out of binary data stored in plural MCs 6 connected to one line 2 of the said memory device, the thickness of a gate insulating film of the MC6 storing more data is set up so as to be thick. The said memory device is provided with a discriminating means 11 to discriminate the data stored in the MC6 where the said film thickness is set up so as to be thick in each line and a converting means to convert read data into regular data according to the discriminated result.
JP4291881A 1981-03-24 1981-03-24 Read-only memory semiconductor device Granted JPS57158093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4291881A JPS57158093A (en) 1981-03-24 1981-03-24 Read-only memory semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4291881A JPS57158093A (en) 1981-03-24 1981-03-24 Read-only memory semiconductor device

Publications (2)

Publication Number Publication Date
JPS57158093A true JPS57158093A (en) 1982-09-29
JPS6152557B2 JPS6152557B2 (en) 1986-11-13

Family

ID=12649392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4291881A Granted JPS57158093A (en) 1981-03-24 1981-03-24 Read-only memory semiconductor device

Country Status (1)

Country Link
JP (1) JPS57158093A (en)

Also Published As

Publication number Publication date
JPS6152557B2 (en) 1986-11-13

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