JPS57157559A - Read-only semiconductor memory - Google Patents

Read-only semiconductor memory

Info

Publication number
JPS57157559A
JPS57157559A JP4217881A JP4217881A JPS57157559A JP S57157559 A JPS57157559 A JP S57157559A JP 4217881 A JP4217881 A JP 4217881A JP 4217881 A JP4217881 A JP 4217881A JP S57157559 A JPS57157559 A JP S57157559A
Authority
JP
Japan
Prior art keywords
resistors
column lines
lines
row
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4217881A
Other languages
Japanese (ja)
Inventor
Masaaki Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4217881A priority Critical patent/JPS57157559A/en
Publication of JPS57157559A publication Critical patent/JPS57157559A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements

Abstract

PURPOSE:To obtain an ROM having a high reliabiliy and high density in a short time by recrystallizing partly by a laser light emission an amorphous Si as a resistor when the crossing points of a plurality of row and column lines are connected with series connecting circuits of resistors and diodes. CONSTITUTION:The crossing points of respective row lines R1, R2 and respective column lines C1, C2 are connected via diodes d11, d12, d21, d22 and resistors r11, r12, r21, r22, thereby forming a programmable ROM. In this structure, fuses which are normally used are not employed as resistors, but polycrystalline silicon injected with impurity ions in high density varying in resistance values in the order of 5 to 6 places is employed around after or before the heat treatment. That is, a series connection of an N<-> type diffused part 2 corresponding to a resistor and a polycrystalline silicon 4 is provided between the metallic wire 1 corresponding to the column lines C1, C2 and an N<+> type diffused layer 3 corresponding to the row lines R1, R2. Further, a laser light is emitted to the silicon 2 except the non-emitted region 5 and is recrystallized, thereby lowering the resistance value.
JP4217881A 1981-03-23 1981-03-23 Read-only semiconductor memory Pending JPS57157559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4217881A JPS57157559A (en) 1981-03-23 1981-03-23 Read-only semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4217881A JPS57157559A (en) 1981-03-23 1981-03-23 Read-only semiconductor memory

Publications (1)

Publication Number Publication Date
JPS57157559A true JPS57157559A (en) 1982-09-29

Family

ID=12628725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4217881A Pending JPS57157559A (en) 1981-03-23 1981-03-23 Read-only semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57157559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281553A (en) * 1987-07-02 1994-01-25 Bull, S.A. Method for controlling the state of conduction of an MOS transistor of an integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281553A (en) * 1987-07-02 1994-01-25 Bull, S.A. Method for controlling the state of conduction of an MOS transistor of an integrated circuit

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