JPS57149982A - Radiation detector - Google Patents

Radiation detector

Info

Publication number
JPS57149982A
JPS57149982A JP56035806A JP3580681A JPS57149982A JP S57149982 A JPS57149982 A JP S57149982A JP 56035806 A JP56035806 A JP 56035806A JP 3580681 A JP3580681 A JP 3580681A JP S57149982 A JPS57149982 A JP S57149982A
Authority
JP
Japan
Prior art keywords
polarities
amplifier
offset
current
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56035806A
Other languages
Japanese (ja)
Inventor
Yoji Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Yokogawa Hokushin Electric Corp
Yokogawa Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp, Yokogawa Hokushin Electric Corp, Yokogawa Electric Works Ltd filed Critical Yokogawa Electric Corp
Priority to JP56035806A priority Critical patent/JPS57149982A/en
Publication of JPS57149982A publication Critical patent/JPS57149982A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors

Abstract

PURPOSE:To make detection sensitivity high, offset current less and S/N high by applying bias voltage to radiation detecting elements respectively. CONSTITUTION:Two pieces of radiation detecting elements IA, IB are mutually reversed of polarities, are applied with the same bias voltage VB in such a way that the polarities thereof are made opposite, and are parallel-connected to each other. The signals from the two elements IA, IB are applied to an amplifier 6 having a feedback resistance RS and an output resistance RO. Since the offset current IO from the one element IA and the offset current IO from the other element IB are reversed of their polarities, they are offset just before the amplifier. On the other hand, the radiation to be measured is made incident to the element IA and since the ionization current IS flows there, the output voltage VOUT associated only to the ionization current IS from the element IA is obtained from the output terminal of the amplifier 6.
JP56035806A 1981-03-12 1981-03-12 Radiation detector Pending JPS57149982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56035806A JPS57149982A (en) 1981-03-12 1981-03-12 Radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035806A JPS57149982A (en) 1981-03-12 1981-03-12 Radiation detector

Publications (1)

Publication Number Publication Date
JPS57149982A true JPS57149982A (en) 1982-09-16

Family

ID=12452163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035806A Pending JPS57149982A (en) 1981-03-12 1981-03-12 Radiation detector

Country Status (1)

Country Link
JP (1) JPS57149982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457322A (en) * 1990-11-28 1995-10-10 Hitachi, Ltd. Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103386A (en) * 1977-02-21 1978-09-08 Toshiba Corp Semiconductor radiation detector
JPS53148399A (en) * 1977-05-31 1978-12-23 Toshiba Corp Radiant ray detector of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103386A (en) * 1977-02-21 1978-09-08 Toshiba Corp Semiconductor radiation detector
JPS53148399A (en) * 1977-05-31 1978-12-23 Toshiba Corp Radiant ray detector of semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457322A (en) * 1990-11-28 1995-10-10 Hitachi, Ltd. Semiconductor radiation detection apparatus for discriminating radiation having differing energy levels

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