JPS57148373A - Charge transfer method - Google Patents

Charge transfer method

Info

Publication number
JPS57148373A
JPS57148373A JP3333281A JP3333281A JPS57148373A JP S57148373 A JPS57148373 A JP S57148373A JP 3333281 A JP3333281 A JP 3333281A JP 3333281 A JP3333281 A JP 3333281A JP S57148373 A JPS57148373 A JP S57148373A
Authority
JP
Japan
Prior art keywords
electrodes
voltage
regions
constitution
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3333281A
Other languages
Japanese (ja)
Inventor
Mitsuaki Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3333281A priority Critical patent/JPS57148373A/en
Publication of JPS57148373A publication Critical patent/JPS57148373A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To simplify the structure and the manufacturing process of CCD and the circuit constitution thereof by a method wherein a four-phase CCD type CCD is driven by a two-phase driving signal, and then a charge transfer is performed. CONSTITUTION:A plurality of electrodes 4 are arranged on the oxide film 3 which was formed on the surface of a semiconductor substrate 2. Among these electrodes 4, 4a and 4b which are adjoiningly located make a pair of electrodes. Every other pair of electrodes are put together and are divided into two sets, and the driving voltage P1 and P2, which are two-phase driving signal and oppositely phased each other, are supplied to respective electrode pairs. In this case, the voltage P1 or P2 is directly supplied to one of electrodes 4a, but voltage P1 or P2 is supplied to the other electrode 4b in delayed rise and fall time. According to this constitution, when the voltage P1 is changed from 0 to VP condition and P2 is changed from VP to 0 condition, the change Q accumulated on regions A2 and B2 is transfered to regions A1 and B1 through the regions B2 and A1.
JP3333281A 1981-03-09 1981-03-09 Charge transfer method Pending JPS57148373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3333281A JPS57148373A (en) 1981-03-09 1981-03-09 Charge transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3333281A JPS57148373A (en) 1981-03-09 1981-03-09 Charge transfer method

Publications (1)

Publication Number Publication Date
JPS57148373A true JPS57148373A (en) 1982-09-13

Family

ID=12383595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3333281A Pending JPS57148373A (en) 1981-03-09 1981-03-09 Charge transfer method

Country Status (1)

Country Link
JP (1) JPS57148373A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
JPS6169173A (en) * 1984-09-12 1986-04-09 Sanyo Electric Co Ltd Charge coupled device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257573A (en) * 1984-06-04 1985-12-19 Matsushita Electronics Corp Semiconductor device
JPS6169173A (en) * 1984-09-12 1986-04-09 Sanyo Electric Co Ltd Charge coupled device

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