JPS6477185A - Electron transfer device - Google Patents

Abstract

PURPOSE:To obtain an electron transfer device having a simple structure, by employing a structure in which at least two electrodes are formed in parallel on the surface of a superconductor through a dielectric film, and electric field is alternately applied to the electrodes so that electrons held in the superconductor are in turn transfered in one direction. CONSTITUTION:A yttrium, barium and copper oxide superconductor 2 is formed in a film on a single crystalline substrate 1 of strontium titanate using a molecular-beam epitaxy. A dielectric film 3 of SiO2 or the like is formed on the surface of the superconductor 2, and a plurality of electrodes 4 are disposed in parallel on the surface thereof through the dielectric film 3. For the operation of this device, after electrons are injected from an IN electrode, the potential well 5 formed in the superconductor 2 is in turn moved in the predetermined direction, by the clock electric field with phase difference of phi1, phi2 or phi3 being in turn applied to the each electrode 4. Correspondingly, the electrons trapped in the potential well is in turn transfered, according to the potential well movement, and is finally supplied to an output electrode (OUT). That is, the presence or absence of the electron is corresponded to the information 0 or 1, respectively, to make this device to serve as a shift resistor, thereby a memory or logical circuit can be formed using this device.