JPS647559A - Contact type image sensor - Google Patents
Contact type image sensorInfo
- Publication number
- JPS647559A JPS647559A JP62308396A JP30839687A JPS647559A JP S647559 A JPS647559 A JP S647559A JP 62308396 A JP62308396 A JP 62308396A JP 30839687 A JP30839687 A JP 30839687A JP S647559 A JPS647559 A JP S647559A
- Authority
- JP
- Japan
- Prior art keywords
- driving circuit
- section
- photoelectric conversion
- transparent substrate
- selector switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To contrive reduction of the area of a driving circuit by a method wherein there exists electrical isolation between a plurality of photoelectric conversion elements formed into a line, a selector switch section for the elements, and a photoelectric conversion element driving circuit section, and all of them are installed on one and the same transparent substrate, and a driving circuit is constituted of a CMOS transistor. CONSTITUTION:A line of photoelectric conversion elements, a selector switch section 4, and a photoelectric conversion element driving circuit section 3 are electrically isolated from each other, constructed on one and the same transparent substrate 1. The driving circuit section 3 is built of a CMOS transistor. In this way, a photodetecting section 2, a driving circuit section 3, a selector switch section 4, and connecting metal electrodes 5 are installed on and the same transparent substrate 1, which enables compacting a sensor unit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62308396A JPS647559A (en) | 1987-02-12 | 1987-12-04 | Contact type image sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3008087 | 1987-02-12 | ||
JP62308396A JPS647559A (en) | 1987-02-12 | 1987-12-04 | Contact type image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647559A true JPS647559A (en) | 1989-01-11 |
Family
ID=26368365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62308396A Pending JPS647559A (en) | 1987-02-12 | 1987-12-04 | Contact type image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647559A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8574976B2 (en) | 1995-03-23 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2023084131A (en) * | 2007-07-27 | 2023-06-16 | 株式会社半導体エネルギー研究所 | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60164351A (en) * | 1984-02-07 | 1985-08-27 | Seiko Epson Corp | Shift register |
JPS61277251A (en) * | 1985-05-31 | 1986-12-08 | Matsushita Electric Ind Co Ltd | Image information inputting device |
-
1987
- 1987-12-04 JP JP62308396A patent/JPS647559A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60164351A (en) * | 1984-02-07 | 1985-08-27 | Seiko Epson Corp | Shift register |
JPS61277251A (en) * | 1985-05-31 | 1986-12-08 | Matsushita Electric Ind Co Ltd | Image information inputting device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8574976B2 (en) | 1995-03-23 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2023084131A (en) * | 2007-07-27 | 2023-06-16 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2023113750A (en) * | 2007-07-27 | 2023-08-16 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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