JPS57141931A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57141931A
JPS57141931A JP2667381A JP2667381A JPS57141931A JP S57141931 A JPS57141931 A JP S57141931A JP 2667381 A JP2667381 A JP 2667381A JP 2667381 A JP2667381 A JP 2667381A JP S57141931 A JPS57141931 A JP S57141931A
Authority
JP
Japan
Prior art keywords
carbon
density
wafer
passing
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2667381A
Other languages
Japanese (ja)
Inventor
Koichiro Honda
Akira Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2667381A priority Critical patent/JPS57141931A/en
Publication of JPS57141931A publication Critical patent/JPS57141931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To prevent the generation of defects such as dislocation and the like caused by the deposition of oxygen by a method wherein, in the manufacturing process of the element such as heat treatment and the like using an Si wafer which contains the carbon having density in excess of the prescribed value, the decreasing rate of carbon density of the wafer after passing through the element manufacturing process is maintained within the prescribed range of value. CONSTITUTION:In the element manufcturing process using an Si wafer made by ordinary CZ method, the carbon density reducing rate before and after passing through various processes, including heat treatment and the like, is included in the conditions of actual processing. To be concrete, as for the wafer having an initial value C of carbon density, to be measured by inflared ray absorbing method, of 5X10<15>cm<-3> or more, the conditions of heat treatment and the like are established in such a manner wherein the density existing after passing through the process is set at C' and the decreasing rate (C-C')/C is restricted higher than 0.95. Accordingly, the carbon contained in crystal is replaced with Si and turned to a nucleus, the deposition of oxygen between lattices can be prevented, thereby enabling to prevent the deterioration of element characteristics caused by the generation of dislocation and the like.
JP2667381A 1981-02-25 1981-02-25 Manufacture of semiconductor device Pending JPS57141931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2667381A JPS57141931A (en) 1981-02-25 1981-02-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2667381A JPS57141931A (en) 1981-02-25 1981-02-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57141931A true JPS57141931A (en) 1982-09-02

Family

ID=12199907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2667381A Pending JPS57141931A (en) 1981-02-25 1981-02-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57141931A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538098A (en) * 1978-09-08 1980-03-17 Ibm Method of increasing gettering effect existing in semiconductor substrate bulk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538098A (en) * 1978-09-08 1980-03-17 Ibm Method of increasing gettering effect existing in semiconductor substrate bulk

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