JPS57136375A - Normal off type field effect transistor - Google Patents

Normal off type field effect transistor

Info

Publication number
JPS57136375A
JPS57136375A JP57000555A JP55582A JPS57136375A JP S57136375 A JPS57136375 A JP S57136375A JP 57000555 A JP57000555 A JP 57000555A JP 55582 A JP55582 A JP 55582A JP S57136375 A JPS57136375 A JP S57136375A
Authority
JP
Japan
Prior art keywords
normal
field effect
effect transistor
type field
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57000555A
Other languages
English (en)
Japanese (ja)
Inventor
Rin Niyuien Toron
Derajiyuboodoufu Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS57136375A publication Critical patent/JPS57136375A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP57000555A 1981-01-06 1982-01-05 Normal off type field effect transistor Pending JPS57136375A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8100096A FR2497603A1 (fr) 1981-01-06 1981-01-06 Transistor a faible temps de commutation, de type normalement bloquant

Publications (1)

Publication Number Publication Date
JPS57136375A true JPS57136375A (en) 1982-08-23

Family

ID=9253889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57000555A Pending JPS57136375A (en) 1981-01-06 1982-01-05 Normal off type field effect transistor

Country Status (3)

Country Link
EP (1) EP0055968A3 (enExample)
JP (1) JPS57136375A (enExample)
FR (1) FR2497603A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US6792953B2 (en) 2000-09-12 2004-09-21 Filligent Limited Tobacco smoke filter

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
JPS60136380A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置
EP0162541A1 (en) * 1984-03-28 1985-11-27 International Standard Electric Corporation Integrated heterojunction FET and photodiode
EP0160377A1 (en) * 1984-03-28 1985-11-06 International Standard Electric Corporation Heterojunction photo-FET and method of making the same
JPS613465A (ja) * 1984-06-18 1986-01-09 Fujitsu Ltd 半導体装置及びその製造方法
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
JPS6254474A (ja) * 1985-05-20 1987-03-10 Sumitomo Electric Ind Ltd 電界効果トランジスタ
JPH031547A (ja) * 1989-05-29 1991-01-08 Mitsubishi Electric Corp 化合物半導体ｍｉｓ・ｆｅｔおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
FR2465317A2 (fr) * 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
FR2469002A1 (fr) * 1979-10-26 1981-05-08 Thomson Csf Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur
CA1145482A (en) * 1979-12-28 1983-04-26 Takashi Mimura High electron mobility single heterojunction semiconductor device
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US6792953B2 (en) 2000-09-12 2004-09-21 Filligent Limited Tobacco smoke filter

Also Published As

Publication number Publication date
FR2497603B1 (enExample) 1984-08-10
EP0055968A2 (fr) 1982-07-14
EP0055968A3 (fr) 1982-08-04
FR2497603A1 (fr) 1982-07-09

Similar Documents

Publication Publication Date Title
GB2106711B (en) Field effect transistor
JPS57147281A (en) Mis field effect transistor
DE3176252D1 (en) Field effect transistor
EP0091831A3 (en) Mobility-modulation field effect transistor
JPS57208171A (en) Transistor
DE3273867D1 (en) Field effect transistor
JPS57104268A (en) Field effect transistor
GB2085656B (en) Field effect transistor
IE822114L (en) Transistor circuit
DE3174485D1 (en) Field effect transistors
JPS57136375A (en) Normal off type field effect transistor
JPS57192081A (en) Field effect transistor unit
GB8322625D0 (en) Field effect transistor
GB8300617D0 (en) Junction field effect transistor
DE3175010D1 (en) Field effect transistor
DE3278188D1 (en) Transistor circuit including biasing circuit
DE3274607D1 (en) Transistor circuit
JPS57204172A (en) Field effect transistor
GB2095941B (en) Transistor corcuit
JPS57157570A (en) Lateral transistor
DE3464441D1 (en) Multiple transistor
GB2069754B (en) Field effect transistor
JPS57174934A (en) Transistor drive circuit
JPS57124471A (en) Transistor
JPS57183068A (en) Integrated circuit lateral transistor