JPS57132482A - Charge transfer type image sensor - Google Patents

Charge transfer type image sensor

Info

Publication number
JPS57132482A
JPS57132482A JP56017765A JP1776581A JPS57132482A JP S57132482 A JPS57132482 A JP S57132482A JP 56017765 A JP56017765 A JP 56017765A JP 1776581 A JP1776581 A JP 1776581A JP S57132482 A JPS57132482 A JP S57132482A
Authority
JP
Japan
Prior art keywords
electrode
voltage
transferred
signal charge
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56017765A
Other languages
Japanese (ja)
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56017765A priority Critical patent/JPS57132482A/en
Publication of JPS57132482A publication Critical patent/JPS57132482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To enable to increase the circuit integration, by providing a transfer electrode for charge storage with photo sensing picture elements, giving a row selection function to this transparent electrode and enabling to control a potential barrier region. CONSTITUTION:When a high level voltage V1 is applied to a transparent electrode 44 and a low level voltage V2 to a transfer electrode 36, a signal charge Qs1 is stored in a potential well Vs under a n type semiconductor region 33b. Next, when the voltage N1 is applied to the electrode 44 and a voltage V3 of a higher level than that of the voltage V2 is applied to the electrode 36, the potential well of a potential barrier region 54 is deeper as V7, and a signal charge Qs2 is stored in the region 33b. When a level voltage V0 is given to the electrode 44 and the voltage V2 is applied to the electrode 36, a signal charge Qs4 is transferred to a transfer channel 48. The charge Qs4 transferred to the channel 48 is immediately transferred to the direction of transfer channel and stored under the electrode where the voltage V3 is applied. Next, when the voltage V0 is applied to the electrode 44 and the voltage V3 to the electrode 36, a signal charge Qs5 is all transferred to the channel 48.
JP56017765A 1981-02-09 1981-02-09 Charge transfer type image sensor Pending JPS57132482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017765A JPS57132482A (en) 1981-02-09 1981-02-09 Charge transfer type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017765A JPS57132482A (en) 1981-02-09 1981-02-09 Charge transfer type image sensor

Publications (1)

Publication Number Publication Date
JPS57132482A true JPS57132482A (en) 1982-08-16

Family

ID=11952795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017765A Pending JPS57132482A (en) 1981-02-09 1981-02-09 Charge transfer type image sensor

Country Status (1)

Country Link
JP (1) JPS57132482A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088568U (en) * 1983-11-22 1985-06-18 日本電気株式会社 Infrared detection solid-state image sensor
JPS60247382A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Solid-state image pickup device and its driving method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6088568U (en) * 1983-11-22 1985-06-18 日本電気株式会社 Infrared detection solid-state image sensor
JPS60247382A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Solid-state image pickup device and its driving method

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