JPS57131374A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS57131374A JPS57131374A JP1765381A JP1765381A JPS57131374A JP S57131374 A JPS57131374 A JP S57131374A JP 1765381 A JP1765381 A JP 1765381A JP 1765381 A JP1765381 A JP 1765381A JP S57131374 A JPS57131374 A JP S57131374A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- high frequency
- electric power
- frequency electric
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1765381A JPS5812347B2 (ja) | 1981-02-09 | 1981-02-09 | プラズマエッチング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1765381A JPS5812347B2 (ja) | 1981-02-09 | 1981-02-09 | プラズマエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57131374A true JPS57131374A (en) | 1982-08-14 |
JPS5812347B2 JPS5812347B2 (ja) | 1983-03-08 |
Family
ID=11949804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1765381A Expired JPS5812347B2 (ja) | 1981-02-09 | 1981-02-09 | プラズマエッチング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5812347B2 (ja) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6056076A (ja) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | スパツタエツチング装置 |
JPS6079726A (ja) * | 1983-10-03 | 1985-05-07 | テ−ガル・コ−ポレ−シヨン | プラズマリアクタ装置及びプラズマエッチング方法 |
JPS60102743A (ja) * | 1983-11-09 | 1985-06-06 | Nec Corp | ドライエツチング方法 |
US4622094A (en) * | 1983-12-14 | 1986-11-11 | Hitachi, Ltd. | Method of controlling dry etching by applying an AC voltage to the workpiece |
JPS63221620A (ja) * | 1987-03-11 | 1988-09-14 | Hitachi Ltd | プラズマ処理方法及び装置 |
JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
JPH03204925A (ja) * | 1990-08-07 | 1991-09-06 | Tadahiro Omi | プラズマプロセス用装置および方法 |
WO1993023978A1 (en) * | 1992-05-13 | 1993-11-25 | Tadahiro Ohmi | Process apparatus |
US5547539A (en) * | 1993-12-22 | 1996-08-20 | Tokyo Electron Limited | Plasma processing apparatus and method |
US5688330A (en) * | 1992-05-13 | 1997-11-18 | Ohmi; Tadahiro | Process apparatus |
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
JPH1126189A (ja) * | 1997-07-07 | 1999-01-29 | Hitachi Ltd | プラズマ処理方法及び装置 |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
JP2001274099A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
US6365060B1 (en) | 1997-08-22 | 2002-04-02 | Tokyo Electron Limited | Method for controlling plasma processor |
US6391147B2 (en) | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6456010B2 (en) | 2000-03-13 | 2002-09-24 | Mitsubishi Heavy Industries, Ltd. | Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus |
US6471822B1 (en) | 1996-01-24 | 2002-10-29 | Applied Materials, Inc. | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
WO2003001577A1 (en) * | 2001-06-22 | 2003-01-03 | Tokyo Electron Limited | Dry-etching method |
JP2003007679A (ja) * | 2001-06-22 | 2003-01-10 | Tokyo Electron Ltd | ドライエッチング方法 |
JP2004511097A (ja) * | 2000-10-06 | 2004-04-08 | ラム リサーチ コーポレーション | プラズマ処理チャンバにおける単周波rf電力を用いたウェハ処理システム、処理装置、および処理方法 |
US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
-
1981
- 1981-02-09 JP JP1765381A patent/JPS5812347B2/ja not_active Expired
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6056076A (ja) * | 1983-09-08 | 1985-04-01 | Ulvac Corp | スパツタエツチング装置 |
JPH0469416B2 (ja) * | 1983-10-03 | 1992-11-06 | Tegal Corp | |
JPS6079726A (ja) * | 1983-10-03 | 1985-05-07 | テ−ガル・コ−ポレ−シヨン | プラズマリアクタ装置及びプラズマエッチング方法 |
JPS60102743A (ja) * | 1983-11-09 | 1985-06-06 | Nec Corp | ドライエツチング方法 |
US4622094A (en) * | 1983-12-14 | 1986-11-11 | Hitachi, Ltd. | Method of controlling dry etching by applying an AC voltage to the workpiece |
JPS63221620A (ja) * | 1987-03-11 | 1988-09-14 | Hitachi Ltd | プラズマ処理方法及び装置 |
JPH02298024A (ja) * | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
JPH03204925A (ja) * | 1990-08-07 | 1991-09-06 | Tadahiro Omi | プラズマプロセス用装置および方法 |
WO1993023978A1 (en) * | 1992-05-13 | 1993-11-25 | Tadahiro Ohmi | Process apparatus |
US5688330A (en) * | 1992-05-13 | 1997-11-18 | Ohmi; Tadahiro | Process apparatus |
US5698062A (en) * | 1993-11-05 | 1997-12-16 | Tokyo Electron Limited | Plasma treatment apparatus and method |
US5547539A (en) * | 1993-12-22 | 1996-08-20 | Tokyo Electron Limited | Plasma processing apparatus and method |
US6431115B2 (en) | 1994-03-25 | 2002-08-13 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6379756B2 (en) | 1994-04-20 | 2002-04-30 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6106737A (en) * | 1994-04-20 | 2000-08-22 | Tokyo Electron Limited | Plasma treatment method utilizing an amplitude-modulated high frequency power |
US6264788B1 (en) | 1994-04-20 | 2001-07-24 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6544380B2 (en) | 1994-04-20 | 2003-04-08 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6991701B2 (en) * | 1994-04-20 | 2006-01-31 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6391147B2 (en) | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US6471822B1 (en) | 1996-01-24 | 2002-10-29 | Applied Materials, Inc. | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
JPH1126189A (ja) * | 1997-07-07 | 1999-01-29 | Hitachi Ltd | プラズマ処理方法及び装置 |
US6365060B1 (en) | 1997-08-22 | 2002-04-02 | Tokyo Electron Limited | Method for controlling plasma processor |
US6456010B2 (en) | 2000-03-13 | 2002-09-24 | Mitsubishi Heavy Industries, Ltd. | Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus |
JP2001274099A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
JP2004511097A (ja) * | 2000-10-06 | 2004-04-08 | ラム リサーチ コーポレーション | プラズマ処理チャンバにおける単周波rf電力を用いたウェハ処理システム、処理装置、および処理方法 |
JP2003007679A (ja) * | 2001-06-22 | 2003-01-10 | Tokyo Electron Ltd | ドライエッチング方法 |
WO2003001577A1 (en) * | 2001-06-22 | 2003-01-03 | Tokyo Electron Limited | Dry-etching method |
US7183217B2 (en) | 2001-06-22 | 2007-02-27 | Tokyo Electron Limited | Dry-etching method |
CN100336180C (zh) * | 2001-06-22 | 2007-09-05 | 东京毅力科创株式会社 | 干蚀刻方法 |
US7531460B2 (en) | 2001-06-22 | 2009-05-12 | Tokyo Electron Limited | Dry-etching method |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US10325759B2 (en) | 2012-02-22 | 2019-06-18 | Lam Research Corporation | Multiple control modes |
US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
Also Published As
Publication number | Publication date |
---|---|
JPS5812347B2 (ja) | 1983-03-08 |
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