JPS57128052A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57128052A JPS57128052A JP56012969A JP1296981A JPS57128052A JP S57128052 A JPS57128052 A JP S57128052A JP 56012969 A JP56012969 A JP 56012969A JP 1296981 A JP1296981 A JP 1296981A JP S57128052 A JPS57128052 A JP S57128052A
- Authority
- JP
- Japan
- Prior art keywords
- tab
- flow
- lead
- crystal
- eutectic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE: To prevent the flow of Au-Si eutectic crystal to a tab lead by forming a stopper for preventing the flow of the eutectic crystal between the tab and the earth bond of the tab lead.
CONSTITUTION: A grooved recess 17 is formed on a part of the surface between a tab 12 and the earth bond 14a of a tab lead, and is formed as a stopper for preventing the flow of an Au-Si eutectic crystal 19. According to this structure, even if the crystal 19 produced between the front surface of the tab 12 and the back surface of a pellet 10 at the time of bonding the pellet 10 is molten on the surface of the tab 12 to flow on the lead 14, the recess 17 can stop flowing of the crystal 19 to the bonded part 14a. Accordingly, in the step of connecting the wire 16 for the earth bond to the bonded part 14a of the lead 14, the eutectic crystal 19 does not flow to the bonded part 14a, and accordingly the bonding of the wire 16 can be effectively performed.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56012969A JPS57128052A (en) | 1981-02-02 | 1981-02-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56012969A JPS57128052A (en) | 1981-02-02 | 1981-02-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57128052A true JPS57128052A (en) | 1982-08-09 |
Family
ID=11820058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56012969A Pending JPS57128052A (en) | 1981-02-02 | 1981-02-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57128052A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62178543U (en) * | 1986-04-30 | 1987-11-12 | ||
JPS6324648A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Semiconductor device |
-
1981
- 1981-02-02 JP JP56012969A patent/JPS57128052A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62178543U (en) * | 1986-04-30 | 1987-11-12 | ||
JPS6324648A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Semiconductor device |
JPH0582975B2 (en) * | 1986-07-16 | 1993-11-24 | Nippon Electric Co |
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