JPS57128052A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57128052A
JPS57128052A JP56012969A JP1296981A JPS57128052A JP S57128052 A JPS57128052 A JP S57128052A JP 56012969 A JP56012969 A JP 56012969A JP 1296981 A JP1296981 A JP 1296981A JP S57128052 A JPS57128052 A JP S57128052A
Authority
JP
Japan
Prior art keywords
tab
flow
lead
crystal
eutectic crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012969A
Other languages
Japanese (ja)
Inventor
Kenichi Takebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUKAN DENSHI KK
Hitachi Ltd
Original Assignee
NITSUKAN DENSHI KK
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUKAN DENSHI KK, Hitachi Ltd filed Critical NITSUKAN DENSHI KK
Priority to JP56012969A priority Critical patent/JPS57128052A/en
Publication of JPS57128052A publication Critical patent/JPS57128052A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/26175Flow barriers
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    • H01L2224/27011Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
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    • H01L2224/29138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/01Chemical elements
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    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the flow of Au-Si eutectic crystal to a tab lead by forming a stopper for preventing the flow of the eutectic crystal between the tab and the earth bond of the tab lead.
CONSTITUTION: A grooved recess 17 is formed on a part of the surface between a tab 12 and the earth bond 14a of a tab lead, and is formed as a stopper for preventing the flow of an Au-Si eutectic crystal 19. According to this structure, even if the crystal 19 produced between the front surface of the tab 12 and the back surface of a pellet 10 at the time of bonding the pellet 10 is molten on the surface of the tab 12 to flow on the lead 14, the recess 17 can stop flowing of the crystal 19 to the bonded part 14a. Accordingly, in the step of connecting the wire 16 for the earth bond to the bonded part 14a of the lead 14, the eutectic crystal 19 does not flow to the bonded part 14a, and accordingly the bonding of the wire 16 can be effectively performed.
COPYRIGHT: (C)1982,JPO&Japio
JP56012969A 1981-02-02 1981-02-02 Semiconductor device Pending JPS57128052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012969A JPS57128052A (en) 1981-02-02 1981-02-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012969A JPS57128052A (en) 1981-02-02 1981-02-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57128052A true JPS57128052A (en) 1982-08-09

Family

ID=11820058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012969A Pending JPS57128052A (en) 1981-02-02 1981-02-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128052A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62178543U (en) * 1986-04-30 1987-11-12
JPS6324648A (en) * 1986-07-16 1988-02-02 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62178543U (en) * 1986-04-30 1987-11-12
JPS6324648A (en) * 1986-07-16 1988-02-02 Nec Corp Semiconductor device
JPH0582975B2 (en) * 1986-07-16 1993-11-24 Nippon Electric Co

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