JPS57125332A - Infrared rays detector - Google Patents

Infrared rays detector

Info

Publication number
JPS57125332A
JPS57125332A JP56012130A JP1213081A JPS57125332A JP S57125332 A JPS57125332 A JP S57125332A JP 56012130 A JP56012130 A JP 56012130A JP 1213081 A JP1213081 A JP 1213081A JP S57125332 A JPS57125332 A JP S57125332A
Authority
JP
Japan
Prior art keywords
region
type impurity
semiconductor
infrared rays
dotted line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012130A
Other languages
Japanese (ja)
Inventor
Makoto Ito
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56012130A priority Critical patent/JPS57125332A/en
Publication of JPS57125332A publication Critical patent/JPS57125332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Radiation Pyrometers (AREA)

Abstract

PURPOSE:To obtain an infrared detector highly sensitive and fast responsive with a low power consumption particularly excellent in the reverse current/voltage characteristic by exposing a region surrounded by a p-n junction to the surface of a semiconductor in a compound semiconductor with a smaller area than that in a semiconductor bulk. CONSTITUTION:An n type impurity is diffused from the top of a p type compound semiconductor substrate 1 to form an impurity-doped region 2. Then, after a given area of a region 2 is covered with a photoresist 7, a p type impurity is injected in the direction of the arrow a to form a p type impurity-doped region 6 at a greater part of the region 2 in such a manner as to join the substrate 1 at the dotted line 9. Then, except for the resist 7, a ZnS insulation film 3 is applied and a contact hole 8 is made to provide a leader wire 4 such an In. This allows the reduction of the diameter D3 of the region 2 surrounded by the dotted line 5 keeping the diameter D1 of the region 2 in a bulk thereby providing a highly sensitive infrared rays detector.
JP56012130A 1981-01-28 1981-01-28 Infrared rays detector Pending JPS57125332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012130A JPS57125332A (en) 1981-01-28 1981-01-28 Infrared rays detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012130A JPS57125332A (en) 1981-01-28 1981-01-28 Infrared rays detector

Publications (1)

Publication Number Publication Date
JPS57125332A true JPS57125332A (en) 1982-08-04

Family

ID=11796944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012130A Pending JPS57125332A (en) 1981-01-28 1981-01-28 Infrared rays detector

Country Status (1)

Country Link
JP (1) JPS57125332A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178664A2 (en) * 1984-10-18 1986-04-23 Matsushita Electronics Corporation Solid state image sensing device and method for making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178664A2 (en) * 1984-10-18 1986-04-23 Matsushita Electronics Corporation Solid state image sensing device and method for making the same

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