JPS5712488A - Non-volatile cell circuit - Google Patents
Non-volatile cell circuitInfo
- Publication number
- JPS5712488A JPS5712488A JP7150781A JP7150781A JPS5712488A JP S5712488 A JPS5712488 A JP S5712488A JP 7150781 A JP7150781 A JP 7150781A JP 7150781 A JP7150781 A JP 7150781A JP S5712488 A JPS5712488 A JP S5712488A
- Authority
- JP
- Japan
- Prior art keywords
- cell circuit
- volatile cell
- volatile
- circuit
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US160530 | 1980-06-18 | ||
US06/160,530 US4336603A (en) | 1980-06-18 | 1980-06-18 | Three terminal electrically erasable programmable read only memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5712488A true JPS5712488A (en) | 1982-01-22 |
JPS6016039B2 JPS6016039B2 (ja) | 1985-04-23 |
Family
ID=22577266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56071507A Expired JPS6016039B2 (ja) | 1980-06-18 | 1981-05-14 | 不揮発性セル回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4336603A (ja) |
EP (1) | EP0042964B1 (ja) |
JP (1) | JPS6016039B2 (ja) |
DE (1) | DE3172114D1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3176810D1 (en) * | 1980-12-23 | 1988-08-18 | Fujitsu Ltd | Electrically programmable non-volatile semiconductor memory device |
US4939559A (en) * | 1981-12-14 | 1990-07-03 | International Business Machines Corporation | Dual electron injector structures using a conductive oxide between injectors |
US4432072A (en) * | 1981-12-31 | 1984-02-14 | International Business Machines Corporation | Non-volatile dynamic RAM cell |
US4446535A (en) * | 1981-12-31 | 1984-05-01 | International Business Machines Corporation | Non-inverting non-volatile dynamic RAM cell |
US4558339A (en) * | 1982-03-09 | 1985-12-10 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
WO1983003167A1 (en) * | 1982-03-09 | 1983-09-15 | Rca Corp | An electrically alterable, nonvolatile floating gate memory device |
CA1204862A (en) * | 1982-09-30 | 1986-05-20 | Ning Hsieh | Programmable read only memory |
US4688078A (en) * | 1982-09-30 | 1987-08-18 | Ning Hseih | Partially relaxable composite dielectric structure |
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
JPS6180866A (ja) * | 1984-09-27 | 1986-04-24 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 不揮発性半導体メモリ・セル |
US4665417A (en) * | 1984-09-27 | 1987-05-12 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
US4729115A (en) * | 1984-09-27 | 1988-03-01 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
IT1213229B (it) * | 1984-10-23 | 1989-12-14 | Ates Componenti Elettron | Cella di memoria non volatile di tipo merged con gate flottante sovrapposta alla gate di controllo e selezione. |
JPH0721317B2 (ja) * | 1986-04-16 | 1995-03-08 | 本田技研工業株式会社 | 車両の前,後進切換装置 |
US5016215A (en) * | 1987-09-30 | 1991-05-14 | Texas Instruments Incorporated | High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing |
FR2650109B1 (fr) * | 1989-07-20 | 1993-04-02 | Gemplus Card Int | Circuit integre mos a tension de seuil ajustable |
JPH0426995A (ja) * | 1990-05-18 | 1992-01-30 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5293328A (en) * | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
US5457061A (en) * | 1994-07-15 | 1995-10-10 | United Microelectronics Corporation | Method of making top floating-gate flash EEPROM structure |
US6103573A (en) * | 1999-06-30 | 2000-08-15 | Sandisk Corporation | Processing techniques for making a dual floating gate EEPROM cell array |
US6151248A (en) | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
US6091633A (en) * | 1999-08-09 | 2000-07-18 | Sandisk Corporation | Memory array architecture utilizing global bit lines shared by multiple cells |
US6512263B1 (en) | 2000-09-22 | 2003-01-28 | Sandisk Corporation | Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming |
US7525149B2 (en) * | 2005-08-24 | 2009-04-28 | Micron Technology, Inc. | Combined volatile and non-volatile memory device with graded composition insulator stack |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5223532A (en) * | 1975-08-16 | 1977-02-22 | Sato Shinzou | Salt bath* electrical heating nitriding of steel subsequent to quenching |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
JPS5513144A (en) * | 1978-07-14 | 1980-01-30 | Iseki Agricult Mach | Device for turning down platter of weight sizer |
US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972059A (en) * | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
US3914855A (en) * | 1974-05-09 | 1975-10-28 | Bell Telephone Labor Inc | Methods for making MOS read-only memories |
US4014675A (en) * | 1974-12-05 | 1977-03-29 | Hercules Incorporated | Fertilizer stick |
US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
JPS5642375A (en) * | 1979-08-31 | 1981-04-20 | Fujitsu Ltd | Semiconductor nonvolatile memory |
DE3067881D1 (en) * | 1980-02-25 | 1984-06-20 | Ibm | Dual electron injector structures |
-
1980
- 1980-06-18 US US06/160,530 patent/US4336603A/en not_active Expired - Lifetime
-
1981
- 1981-05-14 JP JP56071507A patent/JPS6016039B2/ja not_active Expired
- 1981-05-19 EP EP81103816A patent/EP0042964B1/en not_active Expired
- 1981-05-19 DE DE8181103816T patent/DE3172114D1/de not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5223532A (en) * | 1975-08-16 | 1977-02-22 | Sato Shinzou | Salt bath* electrical heating nitriding of steel subsequent to quenching |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
US4203158A (en) * | 1978-02-24 | 1980-05-13 | Intel Corporation | Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same |
US4203158B1 (ja) * | 1978-02-24 | 1992-09-22 | Intel Corp | |
JPS5513144A (en) * | 1978-07-14 | 1980-01-30 | Iseki Agricult Mach | Device for turning down platter of weight sizer |
Also Published As
Publication number | Publication date |
---|---|
JPS6016039B2 (ja) | 1985-04-23 |
US4336603A (en) | 1982-06-22 |
DE3172114D1 (en) | 1985-10-10 |
EP0042964A1 (en) | 1982-01-06 |
EP0042964B1 (en) | 1985-09-04 |
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