JPS57122560A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57122560A JPS57122560A JP20375581A JP20375581A JPS57122560A JP S57122560 A JPS57122560 A JP S57122560A JP 20375581 A JP20375581 A JP 20375581A JP 20375581 A JP20375581 A JP 20375581A JP S57122560 A JPS57122560 A JP S57122560A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resistor
- preventing
- polysilicon
- pinhole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the yield of a semiconductor device in an IC or the like having a high resistance made of polysilicon, by covering an insulating film which prevents a phosphorus-dope from a PSG film on the upper surface of a resistor, thereby preventing the characteristic change of the resistor and the shortcircuit via a pinhole. CONSTITUTION:A polysilicon layer 3 and wiring polysilicon layers 4, 5 are formed to become resistors via an SiO2 film 2 on a P type substrate 1 formed with an element such as a diode, and a PSG film 6 is covered thereon. Then, the film 6 on the layers 3, 5 is removed, B ions are then inplanted and doped, and a CVD SiO2 film 8 is then covered thereon. Therefore, the doped impurity is annealed at a high temperature. Subsequently, a hole is formed at the connecting part of the electrode contact part with the wire, and aluminum electrodes 9-12 are formed. In this manner, when the doped impurity is redistributed and diffused (annealed), it can prevent the doping of the phosphorus scattered from the PSG film in the resistor, thereby preventing the variation in the electric characteristics due to the change in the resistance value. Even if a pinhole 7 is produced in the film 6, the latter can be insulated via the film 8, thereby preventing the shortcircuit trouble.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20375581A JPS57122560A (en) | 1981-12-18 | 1981-12-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20375581A JPS57122560A (en) | 1981-12-18 | 1981-12-18 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4104474A Division JPS5725981B2 (en) | 1974-04-15 | 1974-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57122560A true JPS57122560A (en) | 1982-07-30 |
Family
ID=16479296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20375581A Pending JPS57122560A (en) | 1981-12-18 | 1981-12-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122560A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843590A (en) * | 1986-05-29 | 1989-06-27 | Hewlett-Packard Company | History stack |
| JPH03187255A (en) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Fabrication of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5725981A (en) * | 1980-07-24 | 1982-02-10 | Canon Inc | Electronic appliance with printer |
-
1981
- 1981-12-18 JP JP20375581A patent/JPS57122560A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5725981A (en) * | 1980-07-24 | 1982-02-10 | Canon Inc | Electronic appliance with printer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843590A (en) * | 1986-05-29 | 1989-06-27 | Hewlett-Packard Company | History stack |
| JPH03187255A (en) * | 1989-12-15 | 1991-08-15 | Mitsubishi Electric Corp | Fabrication of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| USRE26803E (en) | Hioh frequency power transistor | |
| KR930020585A (en) | Semiconductor device and manufacturing method | |
| TW230261B (en) | Semiconductor and process of manufacturing thereof | |
| US3999212A (en) | Field effect semiconductor device having a protective diode | |
| US3333326A (en) | Method of modifying electrical characteristic of semiconductor member | |
| US4128845A (en) | Semiconductor integrated circuit devices having inverted frustum-shape contact layers | |
| US6211769B1 (en) | System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow | |
| US4951118A (en) | Semiconductor device having resistor structure | |
| US4890191A (en) | Integrated circuits | |
| US3746945A (en) | Schottky diode clipper device | |
| US4670731A (en) | Semiconductor temperature sensor | |
| JPS5756958A (en) | Semiconductor device | |
| US3612964A (en) | Mis-type variable capacitance semiconductor device | |
| JPS57122560A (en) | Semiconductor device | |
| US4167804A (en) | Integrated circuit process compatible surge protection resistor | |
| JPH06204408A (en) | Diffused resistor for semiconductor device | |
| US4030117A (en) | Zener diode | |
| US3631313A (en) | Resistor for integrated circuit | |
| US5029324A (en) | Semiconductor device having a semiconductive protection layer | |
| US4223335A (en) | Semiconductor device body having identical isolated composite resistor regions | |
| US3360695A (en) | Induced region semiconductor device | |
| JPS6423564A (en) | Space type semiconductor device | |
| JPS61502087A (en) | Monolithically integrated planar semiconductor device and its manufacturing method | |
| JP3160954B2 (en) | Semiconductor device | |
| JPH05235275A (en) | Integrated circuit device |