JPS57122430A - Positive type resist material with dry etching resistance - Google Patents
Positive type resist material with dry etching resistanceInfo
- Publication number
- JPS57122430A JPS57122430A JP826681A JP826681A JPS57122430A JP S57122430 A JPS57122430 A JP S57122430A JP 826681 A JP826681 A JP 826681A JP 826681 A JP826681 A JP 826681A JP S57122430 A JPS57122430 A JP S57122430A
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- methacrylic acid
- methacrylate
- etching resistance
- copolymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 abstract 4
- 229920001577 copolymer Polymers 0.000 abstract 3
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- DGZZQOZXBPFEIY-UHFFFAOYSA-N (2,4,6-trichlorophenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=C(Cl)C=C(Cl)C=C1Cl DGZZQOZXBPFEIY-UHFFFAOYSA-N 0.000 abstract 1
- MJJJBYGWDXJRPP-UHFFFAOYSA-N (4-fluorophenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=C(F)C=C1 MJJJBYGWDXJRPP-UHFFFAOYSA-N 0.000 abstract 1
- AVXYPAZKABBYHD-UHFFFAOYSA-N benzhydryl 2-methylprop-2-enoate Chemical compound C=1C=CC=CC=1C(OC(=O)C(=C)C)C1=CC=CC=C1 AVXYPAZKABBYHD-UHFFFAOYSA-N 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/10—Homopolymers or copolymers of methacrylic acid esters
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP826681A JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
| US06/339,414 US4430419A (en) | 1981-01-22 | 1982-01-15 | Positive resist and method for manufacturing a pattern thereof |
| GB8201246A GB2093048B (en) | 1981-01-22 | 1982-01-18 | Positive resist copolymer and method for manufacturing a pattern therewith |
| CA000394565A CA1211600A (en) | 1981-01-22 | 1982-01-20 | Positive resist and method for manufacturing a pattern thereof |
| NLAANVRAGE8200211,A NL186119C (nl) | 1981-01-22 | 1982-01-21 | Werkwijze voor het vormen van een patroon voor een positieve resist. |
| FR8200936A FR2498198B1 (fr) | 1981-01-22 | 1982-01-21 | Revetement resistant positif et procede pour la formation d'un dessin de ce revetement sur un substrat |
| DE19823201815 DE3201815A1 (de) | 1981-01-22 | 1982-01-21 | Positives resistmaterial und verfahren zur herstellung eines musters daraus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP826681A JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57122430A true JPS57122430A (en) | 1982-07-30 |
| JPH0146863B2 JPH0146863B2 (enrdf_load_stackoverflow) | 1989-10-11 |
Family
ID=11688348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP826681A Granted JPS57122430A (en) | 1981-01-22 | 1981-01-22 | Positive type resist material with dry etching resistance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122430A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
| JPH0398051A (ja) * | 1989-09-11 | 1991-04-23 | Agency Of Ind Science & Technol | 可視光記録材料 |
-
1981
- 1981-01-22 JP JP826681A patent/JPS57122430A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
| JPH0398051A (ja) * | 1989-09-11 | 1991-04-23 | Agency Of Ind Science & Technol | 可視光記録材料 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0146863B2 (enrdf_load_stackoverflow) | 1989-10-11 |
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