JPS57118442A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57118442A
JPS57118442A JP56004323A JP432381A JPS57118442A JP S57118442 A JPS57118442 A JP S57118442A JP 56004323 A JP56004323 A JP 56004323A JP 432381 A JP432381 A JP 432381A JP S57118442 A JPS57118442 A JP S57118442A
Authority
JP
Japan
Prior art keywords
voltage
vth
reduction
potential
punch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56004323A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0361370B2 (OSRAM
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56004323A priority Critical patent/JPS57118442A/ja
Priority to US06/337,969 priority patent/US4542485A/en
Priority to GB8200825A priority patent/GB2091459B/en
Priority to DE3200976A priority patent/DE3200976C2/de
Priority to DE3249749A priority patent/DE3249749C2/de
Publication of JPS57118442A publication Critical patent/JPS57118442A/ja
Priority to GB08415010A priority patent/GB2143698B/en
Priority to GB08415009A priority patent/GB2142795B/en
Publication of JPH0361370B2 publication Critical patent/JPH0361370B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56004323A 1981-01-14 1981-01-14 Semiconductor integrated circuit Granted JPS57118442A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56004323A JPS57118442A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit
US06/337,969 US4542485A (en) 1981-01-14 1982-01-08 Semiconductor integrated circuit
GB8200825A GB2091459B (en) 1981-01-14 1982-01-12 Semiconductor integrated circuit
DE3200976A DE3200976C2 (de) 1981-01-14 1982-01-14 Integrierte Halbleiterschaltung
DE3249749A DE3249749C2 (OSRAM) 1981-01-14 1982-01-14
GB08415010A GB2143698B (en) 1981-01-14 1984-06-13 Semiconductor integrated memory circuit
GB08415009A GB2142795B (en) 1981-01-14 1984-06-13 Semiconductor power down switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004323A JPS57118442A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57118442A true JPS57118442A (en) 1982-07-23
JPH0361370B2 JPH0361370B2 (OSRAM) 1991-09-19

Family

ID=11581239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004323A Granted JPS57118442A (en) 1981-01-14 1981-01-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57118442A (OSRAM)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122354A (en) * 1977-03-31 1978-10-25 Sharp Corp C-mos circuit
JPS55162121A (en) * 1979-03-15 1980-12-17 Nat Semiconductor Corp Cmos voltage regulator circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122354A (en) * 1977-03-31 1978-10-25 Sharp Corp C-mos circuit
JPS55162121A (en) * 1979-03-15 1980-12-17 Nat Semiconductor Corp Cmos voltage regulator circuit

Also Published As

Publication number Publication date
JPH0361370B2 (OSRAM) 1991-09-19

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