JPS5711536A - High-voltage mos inverter and its driving method - Google Patents

High-voltage mos inverter and its driving method

Info

Publication number
JPS5711536A
JPS5711536A JP8536980A JP8536980A JPS5711536A JP S5711536 A JPS5711536 A JP S5711536A JP 8536980 A JP8536980 A JP 8536980A JP 8536980 A JP8536980 A JP 8536980A JP S5711536 A JPS5711536 A JP S5711536A
Authority
JP
Japan
Prior art keywords
voltage
terminal
gate
input
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8536980A
Other languages
Japanese (ja)
Other versions
JPH025338B2 (en
Inventor
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8536980A priority Critical patent/JPS5711536A/en
Publication of JPS5711536A publication Critical patent/JPS5711536A/en
Publication of JPH025338B2 publication Critical patent/JPH025338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To achieve high-voltage and high-speed inverter for plasm discharging cell deive, by turning on and off a gate of a CMOS load transistor (TR) with high voltage with a low-voltage gate input in high speed through the capacitive coupling by a capacitor provided between the gate and a gate input terminal. CONSTITUTION:A driver consists of a N type high voltage TR1 and a P type high voltage TR3, and when a gate input (a) is at zero level, a terminal 12 is a lower potential 6 by a reverse voltage V2 of a Zener diode from a power supply voltage V0 through a high resistance 9, the TR3 is conductive and the output of V0 is obtained at an output point 11. When a driving pulse Vin appears at the input, since the capacitance of a capacitor 7 is greater than the gate input capacitance of the TR1, the change in the Vin is induced between the power supply and the terminal 12, and the TRs 3, 1 are conductive and nonconductive respectively and the output terminal 11 is at zero voltage. When the input voltage changes to zero again, the terminal 12 is at V0-Vz through the operation of the capacitor 7 and the output terminal 11 is again at V0.
JP8536980A 1980-06-24 1980-06-24 High-voltage mos inverter and its driving method Granted JPS5711536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8536980A JPS5711536A (en) 1980-06-24 1980-06-24 High-voltage mos inverter and its driving method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8536980A JPS5711536A (en) 1980-06-24 1980-06-24 High-voltage mos inverter and its driving method

Publications (2)

Publication Number Publication Date
JPS5711536A true JPS5711536A (en) 1982-01-21
JPH025338B2 JPH025338B2 (en) 1990-02-01

Family

ID=13856794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8536980A Granted JPS5711536A (en) 1980-06-24 1980-06-24 High-voltage mos inverter and its driving method

Country Status (1)

Country Link
JP (1) JPS5711536A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150415A (en) * 1984-12-24 1986-07-09 Nec Corp Push-pull output integrated circuit
JPS61249052A (en) * 1985-04-26 1986-11-06 Fuji Photo Film Co Ltd Silver halide color photographic sensitive material
JPS6234419A (en) * 1985-08-07 1987-02-14 Nec Corp High-voltage digital signal output circuit
JPS62157419A (en) * 1985-12-28 1987-07-13 Fujitsu Ltd Level converting circuit
JPS62269419A (en) * 1986-05-19 1987-11-21 Fuji Electric Co Ltd Voltage conversion circuit
FR2691307A1 (en) * 1992-05-18 1993-11-19 Lausanne Ecole Polytechnique F An intermediate circuit between a low voltage logic circuit and a high voltage output stage realized in standard CMOS technology.
JP2008211707A (en) * 2007-02-28 2008-09-11 Nec Electronics Corp Input circuit
JP2011155497A (en) * 2010-01-27 2011-08-11 Tokai Rika Co Ltd Level shift circuit
JP2013005196A (en) * 2011-06-16 2013-01-07 New Japan Radio Co Ltd Enable signal generation circuit
JP2018152318A (en) * 2017-03-15 2018-09-27 セイコーエプソン株式会社 Semiconductor device, light-emission control circuit, and electronic device
CN109004821A (en) * 2018-06-19 2018-12-14 上海艾为电子技术股份有限公司 High pressure turns low-voltage circuit and the electronic device using it
JP2019102962A (en) * 2017-12-01 2019-06-24 ルネサスエレクトロニクス株式会社 Drive circuit, semiconductor device comprising the same, and method of controlling drive circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917161A (en) * 1972-06-01 1974-02-15
JPS5238852A (en) * 1975-09-22 1977-03-25 Seiko Instr & Electronics Ltd Level shift circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917161A (en) * 1972-06-01 1974-02-15
JPS5238852A (en) * 1975-09-22 1977-03-25 Seiko Instr & Electronics Ltd Level shift circuit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150415A (en) * 1984-12-24 1986-07-09 Nec Corp Push-pull output integrated circuit
JPS61249052A (en) * 1985-04-26 1986-11-06 Fuji Photo Film Co Ltd Silver halide color photographic sensitive material
JPS6234419A (en) * 1985-08-07 1987-02-14 Nec Corp High-voltage digital signal output circuit
JPS62157419A (en) * 1985-12-28 1987-07-13 Fujitsu Ltd Level converting circuit
JPS62269419A (en) * 1986-05-19 1987-11-21 Fuji Electric Co Ltd Voltage conversion circuit
US5473268A (en) * 1992-05-18 1995-12-05 Ecole Polytechnique Federale De Lausanne Intermediary circuit between a low voltage logic circuit and a high voltage output stage in standard CMOS technology
FR2691307A1 (en) * 1992-05-18 1993-11-19 Lausanne Ecole Polytechnique F An intermediate circuit between a low voltage logic circuit and a high voltage output stage realized in standard CMOS technology.
JP2008211707A (en) * 2007-02-28 2008-09-11 Nec Electronics Corp Input circuit
JP2011155497A (en) * 2010-01-27 2011-08-11 Tokai Rika Co Ltd Level shift circuit
JP2013005196A (en) * 2011-06-16 2013-01-07 New Japan Radio Co Ltd Enable signal generation circuit
JP2018152318A (en) * 2017-03-15 2018-09-27 セイコーエプソン株式会社 Semiconductor device, light-emission control circuit, and electronic device
JP2019102962A (en) * 2017-12-01 2019-06-24 ルネサスエレクトロニクス株式会社 Drive circuit, semiconductor device comprising the same, and method of controlling drive circuit
CN109004821A (en) * 2018-06-19 2018-12-14 上海艾为电子技术股份有限公司 High pressure turns low-voltage circuit and the electronic device using it

Also Published As

Publication number Publication date
JPH025338B2 (en) 1990-02-01

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