JPS57114826A - Sensor using piezoelectric oscillator - Google Patents
Sensor using piezoelectric oscillatorInfo
- Publication number
- JPS57114826A JPS57114826A JP56001395A JP139581A JPS57114826A JP S57114826 A JPS57114826 A JP S57114826A JP 56001395 A JP56001395 A JP 56001395A JP 139581 A JP139581 A JP 139581A JP S57114826 A JPS57114826 A JP S57114826A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- piezoelectric oscillator
- response
- oscillator
- electric resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
Abstract
PURPOSE:To obtain a small-sized sensor which can give a direct digital process to an output, by forming a drive electrode on one surface of a piezoelectric oscillator and then forming a back electrode on the other surface with a material that varies the electric resistance in response to a detection object. CONSTITUTION:A back electrode is formed on a free surface of a piezoelectric oscillator containing a deive electrode only on its single surface with a material that varies the electric resistance in response to a subject of detection. An oscillating circuit is constituted with use of such piezoelectric oscillator, and an object is detected by making use of the variation of frequency caused by the function of the detection object. For instance, an oscillating circuit is consituted by a single surface drive type quartz oscillator Q, a C-MOS inverter V, a resistance R and a load capacity CL respectively. Then a back electrode Eb is formed on the free surface of the oscillator Q with a material varying its electric resistance in response to the detection object. In this case, CdS, CdSe, etc. is properly selected as the material of the electrode Eb for the photometric purpose; and In, Sb, etc. for the magnetic measurement and a thermistor, etc. for the measurement of temperature respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56001395A JPS57114826A (en) | 1981-01-08 | 1981-01-08 | Sensor using piezoelectric oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56001395A JPS57114826A (en) | 1981-01-08 | 1981-01-08 | Sensor using piezoelectric oscillator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57114826A true JPS57114826A (en) | 1982-07-16 |
JPS6152412B2 JPS6152412B2 (en) | 1986-11-13 |
Family
ID=11500296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56001395A Granted JPS57114826A (en) | 1981-01-08 | 1981-01-08 | Sensor using piezoelectric oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57114826A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0357932A (en) * | 1989-07-27 | 1991-03-13 | Agency Of Ind Science & Technol | Crystal temperatuer sensor for cryogenic temperature |
JPH04242183A (en) * | 1991-01-17 | 1992-08-28 | Murata Mfg Co Ltd | Magnetism sensor |
RU2469301C1 (en) * | 2011-06-09 | 2012-12-10 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Омский Государственный Технический Университет" | Gas sensor |
RU2469300C1 (en) * | 2011-05-20 | 2012-12-10 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Омский Государственный Технический Университет" | Semiconductor gas analyser |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS528875A (en) * | 1975-07-10 | 1977-01-24 | Agency Of Ind Science & Technol | Piezo-electric vibration element |
-
1981
- 1981-01-08 JP JP56001395A patent/JPS57114826A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS528875A (en) * | 1975-07-10 | 1977-01-24 | Agency Of Ind Science & Technol | Piezo-electric vibration element |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0357932A (en) * | 1989-07-27 | 1991-03-13 | Agency Of Ind Science & Technol | Crystal temperatuer sensor for cryogenic temperature |
JPH04242183A (en) * | 1991-01-17 | 1992-08-28 | Murata Mfg Co Ltd | Magnetism sensor |
RU2469300C1 (en) * | 2011-05-20 | 2012-12-10 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Омский Государственный Технический Университет" | Semiconductor gas analyser |
RU2469301C1 (en) * | 2011-06-09 | 2012-12-10 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Омский Государственный Технический Университет" | Gas sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6152412B2 (en) | 1986-11-13 |
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