JPS57112016A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS57112016A
JPS57112016A JP55187233A JP18723380A JPS57112016A JP S57112016 A JPS57112016 A JP S57112016A JP 55187233 A JP55187233 A JP 55187233A JP 18723380 A JP18723380 A JP 18723380A JP S57112016 A JPS57112016 A JP S57112016A
Authority
JP
Japan
Prior art keywords
point side
length
patterning
terminal point
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187233A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6145375B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Yasuda
Takeari Uema
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187233A priority Critical patent/JPS57112016A/ja
Publication of JPS57112016A publication Critical patent/JPS57112016A/ja
Publication of JPS6145375B2 publication Critical patent/JPS6145375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP55187233A 1980-12-29 1980-12-29 Exposure of electron beam Granted JPS57112016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187233A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187233A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS57112016A true JPS57112016A (en) 1982-07-12
JPS6145375B2 JPS6145375B2 (enrdf_load_stackoverflow) 1986-10-07

Family

ID=16202379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187233A Granted JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS57112016A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957428A (ja) * 1982-09-27 1984-04-03 Matsushita Electronics Corp パタ−ン形成方法
JPH02123731A (ja) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> パタン描画方法
JPH0330313A (ja) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JP2000306818A (ja) * 1999-04-23 2000-11-02 Nec Kansai Ltd ストライプ状パターンの露光方法
JP2004214526A (ja) * 2003-01-08 2004-07-29 Riipuru:Kk 荷電粒子露光方法、これに使用する相補分割マスク及び該方法を使用して製造した半導体デバイス
JP2008025560A (ja) * 2006-06-23 2008-02-07 Yamaha Motor Co Ltd 自動二輪車

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269818U (enrdf_load_stackoverflow) * 1988-11-17 1990-05-28
JPH0639788U (ja) * 1992-10-30 1994-05-27 スミ株式会社 食品用容器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957428A (ja) * 1982-09-27 1984-04-03 Matsushita Electronics Corp パタ−ン形成方法
JPH02123731A (ja) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> パタン描画方法
JPH0330313A (ja) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JP2000306818A (ja) * 1999-04-23 2000-11-02 Nec Kansai Ltd ストライプ状パターンの露光方法
JP2004214526A (ja) * 2003-01-08 2004-07-29 Riipuru:Kk 荷電粒子露光方法、これに使用する相補分割マスク及び該方法を使用して製造した半導体デバイス
WO2004064126A1 (ja) * 2003-01-08 2004-07-29 Leepl Corp. 荷電粒子露光方法、それに使用する相補分割マスク、及び該方法を使用して製造した半導体デバイス
JP2008025560A (ja) * 2006-06-23 2008-02-07 Yamaha Motor Co Ltd 自動二輪車

Also Published As

Publication number Publication date
JPS6145375B2 (enrdf_load_stackoverflow) 1986-10-07

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