JPS57112016A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS57112016A
JPS57112016A JP18723380A JP18723380A JPS57112016A JP S57112016 A JPS57112016 A JP S57112016A JP 18723380 A JP18723380 A JP 18723380A JP 18723380 A JP18723380 A JP 18723380A JP S57112016 A JPS57112016 A JP S57112016A
Authority
JP
Japan
Prior art keywords
point side
length
patterning
terminal point
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18723380A
Other languages
Japanese (ja)
Other versions
JPS6145375B2 (en
Inventor
Hiroshi Yasuda
Takeari Uema
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18723380A priority Critical patent/JPS57112016A/en
Publication of JPS57112016A publication Critical patent/JPS57112016A/en
Publication of JPS6145375B2 publication Critical patent/JPS6145375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enalbe to perform a patterning smoothly by a method wherein, when a long pattern having a microscopic width is drawn successively by shifting a rectangular beam, the length of the electron beam is changed by partially overlapping it for every shot between the end section of the starting point side of patterning and the end section of the terminal point side of the patterns to be drawn. CONSTITUTION:When the long pattern with a microscopic width, having a patterning starting point side 13 and a terminal point side end section 14, is drawn using a variable type electron beam exposing method, a rectangular beam is shifted to the direction 12 shown by arrows by cutting the beam for each shot. To be more precise, the starting point side 13 is fixed and exposed by a small rectangular beam 15, and in the same manner, the terminal point side is fixed, its length is made longer successively and exposed by beams 16-18, which are partially overlapped. Then, when the above length has reached the prescribed length l, the exposure is continued using partially overlapping beams 18-22, and as it approaches the terminal point side 14, the terminal point side 14 is fixed, and an overlapping exposure is performed using beams 23-26, the length of which is becoming shorter successively. Through these procedures, the smooth and even patterning can be performed even on the joint sections between each shot.
JP18723380A 1980-12-29 1980-12-29 Exposure of electron beam Granted JPS57112016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18723380A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18723380A JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS57112016A true JPS57112016A (en) 1982-07-12
JPS6145375B2 JPS6145375B2 (en) 1986-10-07

Family

ID=16202379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18723380A Granted JPS57112016A (en) 1980-12-29 1980-12-29 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS57112016A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957428A (en) * 1982-09-27 1984-04-03 Matsushita Electronics Corp Forming method for pattern
JPH02123731A (en) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> Pattern drawing method
JPH0330313A (en) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd Fine pattern formation
JP2000306818A (en) * 1999-04-23 2000-11-02 Nec Kansai Ltd Exposure method of stripe pattern
JP2004214526A (en) * 2003-01-08 2004-07-29 Riipuru:Kk Charged particle exposure method, complementary division mask used therefor and semiconductor device manufactured by using the same
JP2008025560A (en) * 2006-06-23 2008-02-07 Yamaha Motor Co Ltd Motorcycle

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269818U (en) * 1988-11-17 1990-05-28
JPH0639788U (en) * 1992-10-30 1994-05-27 スミ株式会社 Food container

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957428A (en) * 1982-09-27 1984-04-03 Matsushita Electronics Corp Forming method for pattern
JPH02123731A (en) * 1988-11-02 1990-05-11 Nippon Telegr & Teleph Corp <Ntt> Pattern drawing method
JPH0330313A (en) * 1989-06-27 1991-02-08 Matsushita Electric Ind Co Ltd Fine pattern formation
JP2000306818A (en) * 1999-04-23 2000-11-02 Nec Kansai Ltd Exposure method of stripe pattern
JP2004214526A (en) * 2003-01-08 2004-07-29 Riipuru:Kk Charged particle exposure method, complementary division mask used therefor and semiconductor device manufactured by using the same
WO2004064126A1 (en) * 2003-01-08 2004-07-29 Leepl Corp. Charge particle exposure method, complementarily divided mask used for it, and semiconductor device produced by using the method
JP2008025560A (en) * 2006-06-23 2008-02-07 Yamaha Motor Co Ltd Motorcycle

Also Published As

Publication number Publication date
JPS6145375B2 (en) 1986-10-07

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