JPS57108263A - Producing device for thin film pattern - Google Patents
Producing device for thin film patternInfo
- Publication number
- JPS57108263A JPS57108263A JP18720380A JP18720380A JPS57108263A JP S57108263 A JPS57108263 A JP S57108263A JP 18720380 A JP18720380 A JP 18720380A JP 18720380 A JP18720380 A JP 18720380A JP S57108263 A JPS57108263 A JP S57108263A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mask
- electrodes
- metallic
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Abstract
PURPOSE:To control adhesive relation between a substrate surface and a mask so as to achieve adequate adhesion by providing plural pieces of metallic electrodes on the substrate side forming thin film patterns with the mask and detecting electrically the contact between the substrate and the mask. CONSTITUTION:An insulation film 22 is applied on the surface of a semiconductor substrate 21 disposed on a substrate stage. Metallic electrodes 23, 24 are beforehand deposited and formed via the film 22 on the peripheral part of the substrate 21. The electrodes 23, 24 and a detecting circuit 26 are connected by means of a switch S. A metallic mask 25 positioned, fixed and disposed opposite to the substrate 21 at a slight spacing is also connected to the circuit 26. The substrate 21 is brought closer to the mask 25, and at the moment when both adhere, the electrical conduction between the mask 25 and the electrodes 23, 24 on the substrate 21 side is generated, and this is detected with an ammeter M. At this moment, the adhering operation of the substrate 21 is stopped, whereby the adhesive relation is adequately controlled, and the damaging of the substrate 21 or the mask 25 is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18720380A JPS57108263A (en) | 1980-12-25 | 1980-12-25 | Producing device for thin film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18720380A JPS57108263A (en) | 1980-12-25 | 1980-12-25 | Producing device for thin film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57108263A true JPS57108263A (en) | 1982-07-06 |
Family
ID=16201890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18720380A Pending JPS57108263A (en) | 1980-12-25 | 1980-12-25 | Producing device for thin film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57108263A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1548147A1 (en) * | 2003-12-26 | 2005-06-29 | Seiko Epson Corporation | Thin film formation method |
CN106350767A (en) * | 2015-07-14 | 2017-01-25 | 上海和辉光电有限公司 | OLED substrate vacuum evaporation structure and OLED mask defect detection method |
-
1980
- 1980-12-25 JP JP18720380A patent/JPS57108263A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1548147A1 (en) * | 2003-12-26 | 2005-06-29 | Seiko Epson Corporation | Thin film formation method |
CN106350767A (en) * | 2015-07-14 | 2017-01-25 | 上海和辉光电有限公司 | OLED substrate vacuum evaporation structure and OLED mask defect detection method |
CN106350767B (en) * | 2015-07-14 | 2019-02-15 | 上海和辉光电有限公司 | Structure and OLED exposure mask defect inspection method is deposited in oled substrate |
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