JPS57107087A - Hall effect device - Google Patents

Hall effect device

Info

Publication number
JPS57107087A
JPS57107087A JP55184230A JP18423080A JPS57107087A JP S57107087 A JPS57107087 A JP S57107087A JP 55184230 A JP55184230 A JP 55184230A JP 18423080 A JP18423080 A JP 18423080A JP S57107087 A JPS57107087 A JP S57107087A
Authority
JP
Japan
Prior art keywords
hall
polarity
magnetic field
control current
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55184230A
Other languages
Japanese (ja)
Inventor
Sukeyoshi Tanaka
Kunihiko Matsui
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55184230A priority Critical patent/JPS57107087A/en
Publication of JPS57107087A publication Critical patent/JPS57107087A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To simply and surely compensate unbalance voltage by providing level differences between a pair of Hall output terminal regions and a region connecting two parallel control current paths located between the Hall output terminal regions. CONSTITUTION:Photo etching is applied to an N type GaAs layer on a semi- insulating GaAs substrate to make a six-terminal Hall element. At that time, level differences are provided between regions A, C provided with Hall output terminals 13, 23 and a region B connecting two parallel control current paths made by control electrodes 11, 12, 21, 22. With control current flowed by forming the polarity of power sources 14, 24 as shown in a drawing under zero magnetic field status, four right and left terminal Hall elements have asymmetrical output terminals, so unbalance voltages VHO1, VHO2 canceling polarity are generated. The polarity is completely canceled out by adjusting resistors 15, 25. Next, with a magnetic field H having the polarity shown in the drawing applied to the device, each Hall voltage VH1, VH2 at right and left sides becomes the same polarity because the direction of the magnetic field and that of current are the same and the output VH, the sum of each Hall voltage, will be obtained.
JP55184230A 1980-12-25 1980-12-25 Hall effect device Pending JPS57107087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184230A JPS57107087A (en) 1980-12-25 1980-12-25 Hall effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184230A JPS57107087A (en) 1980-12-25 1980-12-25 Hall effect device

Publications (1)

Publication Number Publication Date
JPS57107087A true JPS57107087A (en) 1982-07-03

Family

ID=16149644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184230A Pending JPS57107087A (en) 1980-12-25 1980-12-25 Hall effect device

Country Status (1)

Country Link
JP (1) JPS57107087A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106943A2 (en) * 1982-08-30 1984-05-02 LGZ LANDIS & GYR ZUG AG Hall element
US4698522A (en) * 1986-11-21 1987-10-06 Sangamo Weston, Inc. Structure for Hall device for compensation of first and second order voltage offsets
US4739264A (en) * 1985-02-25 1988-04-19 Seiko Instruments & Electronics Ltd. Magnetic sensor using a plurality of Hall effect devices
US4875011A (en) * 1986-03-07 1989-10-17 Seiko Instruments Inc. Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate
FR2747497A1 (en) * 1996-04-12 1997-10-17 Silmag Sa Magnetic head for data recording
EP0807925A1 (en) * 1996-05-15 1997-11-19 Silmag Magnetic head with semiconductor field detector situated beneath the gap

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106943A2 (en) * 1982-08-30 1984-05-02 LGZ LANDIS & GYR ZUG AG Hall element
US4739264A (en) * 1985-02-25 1988-04-19 Seiko Instruments & Electronics Ltd. Magnetic sensor using a plurality of Hall effect devices
US4875011A (en) * 1986-03-07 1989-10-17 Seiko Instruments Inc. Magnetic sensor using integrated silicon Hall effect elements formed on the (100) plane of a silicon substrate
US4698522A (en) * 1986-11-21 1987-10-06 Sangamo Weston, Inc. Structure for Hall device for compensation of first and second order voltage offsets
FR2747497A1 (en) * 1996-04-12 1997-10-17 Silmag Sa Magnetic head for data recording
EP0807925A1 (en) * 1996-05-15 1997-11-19 Silmag Magnetic head with semiconductor field detector situated beneath the gap
FR2748843A1 (en) * 1996-05-15 1997-11-21 Silmag Sa MAGNETIC HEAD WITH SEMICONDUCTOR FIELD SENSOR PLACED UNDER THE INTERFER

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