JPS57107030A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57107030A
JPS57107030A JP55184734A JP18473480A JPS57107030A JP S57107030 A JPS57107030 A JP S57107030A JP 55184734 A JP55184734 A JP 55184734A JP 18473480 A JP18473480 A JP 18473480A JP S57107030 A JPS57107030 A JP S57107030A
Authority
JP
Japan
Prior art keywords
film
region
wiring
substrate
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55184734A
Other languages
Japanese (ja)
Inventor
Shigeo Kashiwagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55184734A priority Critical patent/JPS57107030A/en
Publication of JPS57107030A publication Critical patent/JPS57107030A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To reduce a contact resistance of a wiring and then obtain an ideal electric connection by providing a high temperature of annealing in oxygen after forming the wiring when a molybdenum silicide layer is provided as a wiring connected to a semiconductor layer of a semiconductor substrate. CONSTITUTION:A thick field oxide film 1 is provided in the circumferential portion of P type Si substrate 3 by utilizing for its base a P<+> type channel cut region 2, and an N<+> type drain region 5 and a source region 6 are diffusion- formed respectively on the surfacial portion of the substrate 3 surrounded by said oxide film 1. Subsequently, a polycrystal Si drain electrode 8 is provided through a dielectric film 7 for capacitor on the region 5 and a polycrystal Si gate electrode 10 is provided through a gate insulation film 9 on the substrate 3 between the regions 6 and 5. Thereafter, the entire surface is covered with a PSG film 11, a contact window 12 is provided on the region 6, a MoSi2 film 13 is laminated over the entire surface including the window 12 and a MoSi2 film 14 making contact with the region 6 is left as a wiring through etching. Subsequently, an annealing at 1,000-1,050 deg.C is conducted in O2 atmosphere of a normal pressure to polycrystallize the film 14 having a low resistance.
JP55184734A 1980-12-25 1980-12-25 Manufacture of semiconductor device Pending JPS57107030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184734A JPS57107030A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184734A JPS57107030A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57107030A true JPS57107030A (en) 1982-07-03

Family

ID=16158424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184734A Pending JPS57107030A (en) 1980-12-25 1980-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57107030A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114241A (en) * 1998-06-29 2000-09-05 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance
US6277738B1 (en) 1999-06-23 2001-08-21 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6114241A (en) * 1998-06-29 2000-09-05 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance
US6277738B1 (en) 1999-06-23 2001-08-21 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a semiconductor device capable of reducing contact resistance

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