JPS57107027A - Fabrication of amorphous semiconductor layer - Google Patents

Fabrication of amorphous semiconductor layer

Info

Publication number
JPS57107027A
JPS57107027A JP55184347A JP18434780A JPS57107027A JP S57107027 A JPS57107027 A JP S57107027A JP 55184347 A JP55184347 A JP 55184347A JP 18434780 A JP18434780 A JP 18434780A JP S57107027 A JPS57107027 A JP S57107027A
Authority
JP
Japan
Prior art keywords
electrode
heater
semiconductor layer
amorphous semiconductor
serving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55184347A
Other languages
Japanese (ja)
Inventor
Hajime Kurihara
Kuniharu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55184347A priority Critical patent/JPS57107027A/en
Publication of JPS57107027A publication Critical patent/JPS57107027A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To produce a layer with a high photoconductivity by a method wherein when a vacuum chamber is kept at a fixed internal pressure by introducing gases of monosilane, dibolane, phosphine, etc. and an amorphous semiconductor layer is produced by means of a discharge inside the chamber, both a main electrode serving as a substrate holder as well and the opposite electrode are heated. CONSTITUTION:A heater 38 is mounted on the bottom of a vacuum chamber 31 having a gas take-in port in the bottom and a gas exhaust passage 37 on the side, and on the heater 38 an opposite electrode 33 serving as a gas introduction shower is mounted. Further, a rotatable main electrode 32 serving as a substrate holder as well is placed over the electrode 33 at a fixed distance, and a heater 34 for heating the substrate is laid on the back of the electrode 32 and covered with a heater cover 35, and a thermocouple 36 is bonded on the cover 35. Gases of monosilane, dibolane, phosphine, etc. are introduced into the chamber 31 till reaching a fixed internal pressure, and a desired amorphous semiconductor layer is deposited on the substrate mounted on the main electrode 32 by discharging electricity. Thus, generation of pin holes can be avoided, and the photoconductivity can be enhanced by nearly one digit.
JP55184347A 1980-12-25 1980-12-25 Fabrication of amorphous semiconductor layer Pending JPS57107027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184347A JPS57107027A (en) 1980-12-25 1980-12-25 Fabrication of amorphous semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184347A JPS57107027A (en) 1980-12-25 1980-12-25 Fabrication of amorphous semiconductor layer

Publications (1)

Publication Number Publication Date
JPS57107027A true JPS57107027A (en) 1982-07-03

Family

ID=16151675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184347A Pending JPS57107027A (en) 1980-12-25 1980-12-25 Fabrication of amorphous semiconductor layer

Country Status (1)

Country Link
JP (1) JPS57107027A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147239A (en) * 1993-11-25 1995-06-06 Nec Corp Low pressure film forming equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147239A (en) * 1993-11-25 1995-06-06 Nec Corp Low pressure film forming equipment

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