JPS57106081A - Normally-off type schottky junction field effect transistor - Google Patents

Normally-off type schottky junction field effect transistor

Info

Publication number
JPS57106081A
JPS57106081A JP18306780A JP18306780A JPS57106081A JP S57106081 A JPS57106081 A JP S57106081A JP 18306780 A JP18306780 A JP 18306780A JP 18306780 A JP18306780 A JP 18306780A JP S57106081 A JPS57106081 A JP S57106081A
Authority
JP
Japan
Prior art keywords
regions
region
normally
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18306780A
Other languages
English (en)
Other versions
JPS6313354B2 (ja
Inventor
Takashi Mizutani
Yasuhiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18306780A priority Critical patent/JPS57106081A/ja
Publication of JPS57106081A publication Critical patent/JPS57106081A/ja
Publication of JPS6313354B2 publication Critical patent/JPS6313354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP18306780A 1980-12-23 1980-12-23 Normally-off type schottky junction field effect transistor Granted JPS57106081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18306780A JPS57106081A (en) 1980-12-23 1980-12-23 Normally-off type schottky junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18306780A JPS57106081A (en) 1980-12-23 1980-12-23 Normally-off type schottky junction field effect transistor

Publications (2)

Publication Number Publication Date
JPS57106081A true JPS57106081A (en) 1982-07-01
JPS6313354B2 JPS6313354B2 (ja) 1988-03-25

Family

ID=16129161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18306780A Granted JPS57106081A (en) 1980-12-23 1980-12-23 Normally-off type schottky junction field effect transistor

Country Status (1)

Country Link
JP (1) JPS57106081A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05820U (ja) * 1991-06-20 1993-01-08 ミサワホーム株式会社 小屋裏換気機能を有する化粧母屋

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128659U (ja) * 1989-03-31 1990-10-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05820U (ja) * 1991-06-20 1993-01-08 ミサワホーム株式会社 小屋裏換気機能を有する化粧母屋

Also Published As

Publication number Publication date
JPS6313354B2 (ja) 1988-03-25

Similar Documents

Publication Publication Date Title
GB1180186A (en) Improvements relating to Field-effect Transistors
GB1226080A (ja)
GB1393792A (en) Field effect transistor
US3923553A (en) Method of manufacturing lateral or field-effect transistors
JPS57106081A (en) Normally-off type schottky junction field effect transistor
GB1073135A (en) Semiconductor current limiter
KR870004529A (ko) 반도체 기억장치
JPS55130171A (en) Mos field effect transistor
JPS55117281A (en) 3[5 group compound semiconductor hetero structure mosfet
JPS5691477A (en) Semiconductor
KR890005892A (ko) 반도체장치와 그 제조방법
KR920022563A (ko) 반도체 장치 및 그 제조방법
JPH0682686B2 (ja) 電界効果トランジスタ
JPS5831426Y2 (ja) 接合型電界効果トランジスタ
JPS57106082A (en) Manufacture of schottky junction type electric field effect transistor
JPS56158480A (en) Field effect transistor
JPS6461059A (en) Semiconductor device
JPS57199268A (en) Junction type field effect transistor
JPS5466078A (en) Composite field effect transistor
JPS55166965A (en) Junction type fet
JPS645074A (en) Field effect transistor
US3659161A (en) Blocking field effect transistor
JPS5789260A (en) Semiconductor logic circuit
JPS5649575A (en) Junction type field effect semiconductor
JPS5736863A (ja) Handotaisochinoseizohoho