JPS57104876A - Semiconductor radiation detecting device - Google Patents
Semiconductor radiation detecting deviceInfo
- Publication number
- JPS57104876A JPS57104876A JP18158680A JP18158680A JPS57104876A JP S57104876 A JPS57104876 A JP S57104876A JP 18158680 A JP18158680 A JP 18158680A JP 18158680 A JP18158680 A JP 18158680A JP S57104876 A JPS57104876 A JP S57104876A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- detecting element
- radiation
- sensitivity
- compensating constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
Abstract
PURPOSE:To compensate degradation of sensitivity due to the radiation damage of a semiconductor sensing part, by simultaneously, measuring the radiation by using a plurality of the semiconductor detecting parts having different thicknesses, and comparing the output signals from said semiconductor detecting parts. CONSTITUTION:A detecting element 1 is thinner than a detecting element 2 in thickness, and absorbes only the samll quantity of the radiation. Therefore the element 1 is hard to be damaged, and the curve of the signal A is flat in comparison with that of the signal B. A sensitivity ratio A/B is obtained from a dividing circuit 4. Then a compensating constant C is outputted from a compensating constant generator 5. The output of the detecting element 2 is compensated by said compensating constant C, and the irradiated dosage rate is displayed by a dosage rate display 7. In this constitution, the sensitivity compensation before the measurement in order to check the radiation damage of the semiconductor detecting element can be omitted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18158680A JPS57104876A (en) | 1980-12-22 | 1980-12-22 | Semiconductor radiation detecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18158680A JPS57104876A (en) | 1980-12-22 | 1980-12-22 | Semiconductor radiation detecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57104876A true JPS57104876A (en) | 1982-06-30 |
Family
ID=16103393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18158680A Pending JPS57104876A (en) | 1980-12-22 | 1980-12-22 | Semiconductor radiation detecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57104876A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100885A (en) * | 1982-12-01 | 1984-06-11 | Matsushita Electric Ind Co Ltd | Array for detecting element of radiant rays |
JP2006288236A (en) * | 2005-04-07 | 2006-10-26 | Shimano Inc | Tip section rod |
-
1980
- 1980-12-22 JP JP18158680A patent/JPS57104876A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59100885A (en) * | 1982-12-01 | 1984-06-11 | Matsushita Electric Ind Co Ltd | Array for detecting element of radiant rays |
JPH056155B2 (en) * | 1982-12-01 | 1993-01-25 | Matsushita Electric Ind Co Ltd | |
JP2006288236A (en) * | 2005-04-07 | 2006-10-26 | Shimano Inc | Tip section rod |
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