JPS57103368A - Variable-capacitance device - Google Patents
Variable-capacitance deviceInfo
- Publication number
- JPS57103368A JPS57103368A JP55180061A JP18006180A JPS57103368A JP S57103368 A JPS57103368 A JP S57103368A JP 55180061 A JP55180061 A JP 55180061A JP 18006180 A JP18006180 A JP 18006180A JP S57103368 A JPS57103368 A JP S57103368A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- width
- depletion layer
- capacitance
- control electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180061A JPS57103368A (en) | 1980-12-18 | 1980-12-18 | Variable-capacitance device |
| FR8123598A FR2496993A1 (fr) | 1980-12-18 | 1981-12-17 | Condensateur variable |
| DE19813150057 DE3150057A1 (de) | 1980-12-18 | 1981-12-17 | Kondensator mit veraenderbarer kapazitaet |
| GB8138233A GB2092375B (en) | 1980-12-18 | 1981-12-18 | Variable capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180061A JPS57103368A (en) | 1980-12-18 | 1980-12-18 | Variable-capacitance device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57103368A true JPS57103368A (en) | 1982-06-26 |
Family
ID=16076792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55180061A Pending JPS57103368A (en) | 1980-12-18 | 1980-12-18 | Variable-capacitance device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57103368A (enExample) |
| DE (1) | DE3150057A1 (enExample) |
| FR (1) | FR2496993A1 (enExample) |
| GB (1) | GB2092375B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2103012A (en) * | 1981-07-03 | 1983-02-09 | Clarion Co Ltd | Variable capacitor |
| US20090050999A1 (en) * | 2007-08-21 | 2009-02-26 | Western Lights Semiconductor Corp. | Apparatus for storing electrical energy |
| US10615294B2 (en) | 2018-06-13 | 2020-04-07 | Qualcomm Incorporated | Variable capacitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120177A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural electrode structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2060250B (en) * | 1979-03-12 | 1983-12-14 | Clarion Co Ltd | Controllable semiconductor capacitors |
-
1980
- 1980-12-18 JP JP55180061A patent/JPS57103368A/ja active Pending
-
1981
- 1981-12-17 FR FR8123598A patent/FR2496993A1/fr active Granted
- 1981-12-17 DE DE19813150057 patent/DE3150057A1/de not_active Withdrawn
- 1981-12-18 GB GB8138233A patent/GB2092375B/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120177A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural electrode structures |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2092375B (en) | 1985-04-24 |
| DE3150057A1 (de) | 1982-08-05 |
| FR2496993B1 (enExample) | 1984-05-04 |
| GB2092375A (en) | 1982-08-11 |
| FR2496993A1 (fr) | 1982-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2989650A (en) | Semiconductor capacitor | |
| US4458261A (en) | Insulated gate type transistors | |
| JPS52102690A (en) | Semiconductor capacitance device | |
| JPS55120175A (en) | Variable capacitance diode with plural super-capacitance variable electrode structures | |
| US3999207A (en) | Field effect transistor with a carrier injecting region | |
| KR950021714A (ko) | 박막트랜지스터를 갖는 반도체장치와 그의 제조방법 | |
| EP0178148A3 (en) | Thin film photodetector | |
| JPS57103368A (en) | Variable-capacitance device | |
| JPS57208177A (en) | Semiconductor negative resistance element | |
| JPS5269589A (en) | Semiconductor capacity element | |
| JPS55120177A (en) | Variable capacitance diode with plural electrode structures | |
| JPS55120178A (en) | Mis variable capacitance diode with plural electrode structures | |
| JPS55120173A (en) | Schottky type variable capacitance diode with plural electrode structures | |
| JPS55120174A (en) | P-n junction variable capacitance diode with plural electrode structures | |
| JPS55120176A (en) | Variable capacitance diode with plural electrode structures | |
| JPS5678174A (en) | Variable capacity diode | |
| JPS5676576A (en) | Semiconductor device and manufacture thereof | |
| JPS5518006A (en) | Mos-type dynamic memory | |
| JPS5588372A (en) | Lateral type transistor | |
| JPS57166067A (en) | Bias generating unit for substrate | |
| JPS572577A (en) | Semiconductor device | |
| JPS57121271A (en) | Field effect transistor | |
| JPS5571059A (en) | Mis memory element | |
| JPS57111069A (en) | Variable capacitance diode | |
| JPS56104475A (en) | Piezo-resistance pressing device |