JPS57101751A - Manufacture of indium oxide series gas sensor - Google Patents

Manufacture of indium oxide series gas sensor

Info

Publication number
JPS57101751A
JPS57101751A JP17782080A JP17782080A JPS57101751A JP S57101751 A JPS57101751 A JP S57101751A JP 17782080 A JP17782080 A JP 17782080A JP 17782080 A JP17782080 A JP 17782080A JP S57101751 A JPS57101751 A JP S57101751A
Authority
JP
Japan
Prior art keywords
less
porcelain clay
substrate
gas sensor
pdcl2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17782080A
Other languages
Japanese (ja)
Other versions
JPS6133466B2 (en
Inventor
Eiichi Kawamata
Kenji Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OYAMA KOGYO KOUTOU SENMON GATS
OYAMA KOGYO KOUTOU SENMON GATSUKOUCHIYOU
Original Assignee
OYAMA KOGYO KOUTOU SENMON GATS
OYAMA KOGYO KOUTOU SENMON GATSUKOUCHIYOU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OYAMA KOGYO KOUTOU SENMON GATS, OYAMA KOGYO KOUTOU SENMON GATSUKOUCHIYOU filed Critical OYAMA KOGYO KOUTOU SENMON GATS
Priority to JP17782080A priority Critical patent/JPS57101751A/en
Publication of JPS57101751A publication Critical patent/JPS57101751A/en
Publication of JPS6133466B2 publication Critical patent/JPS6133466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To obtain elements having selecting capability with regard to the kind of gas by adding porcelain clay to a parent material of In2O3, and forming a sintering type semiconductor thick film which is activated by PdCl2 on an insulating substrate. CONSTITUTION:An activating raw material of PdCl2 (5wt% or less) and a suppressing material of porcelain clay (10wt% or less) are added to In2O3 powder of 200 meshes or less and mixed. They are stirred together with distilled water and colloidal state suspension is prepared. A specified amount of said suspension is applied on the substrate and dried. Thereafter the substrate is completely burned in atmosphere. Then an annealing process is performed in the air at 200 deg.C in order to relieve the mechanical stress of the thick film and stabilize the electrical secular change. A pair of electrodes are provided and the gas sensor is obtained. In the sensor prepared in this way, the element which is highly sensitive to C3H8 and CO and the element which has the high sensitivity to CO but the low sensitivity to C3H8 are obtained depending on the amount of addition of the activating material and the suppressing porcelain clay.
JP17782080A 1980-12-16 1980-12-16 Manufacture of indium oxide series gas sensor Granted JPS57101751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17782080A JPS57101751A (en) 1980-12-16 1980-12-16 Manufacture of indium oxide series gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17782080A JPS57101751A (en) 1980-12-16 1980-12-16 Manufacture of indium oxide series gas sensor

Publications (2)

Publication Number Publication Date
JPS57101751A true JPS57101751A (en) 1982-06-24
JPS6133466B2 JPS6133466B2 (en) 1986-08-02

Family

ID=16037665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17782080A Granted JPS57101751A (en) 1980-12-16 1980-12-16 Manufacture of indium oxide series gas sensor

Country Status (1)

Country Link
JP (1) JPS57101751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604594A1 (en) * 1986-02-14 1987-08-20 Schott Glaswerke Thin-film gas sensors having high measuring sensitivity as multilayer systems based on dipped indium oxide layers for detection of gas traces in carrier gases

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137494A (en) * 1975-05-23 1976-11-27 Res Inst For Prod Dev Gas detector element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137494A (en) * 1975-05-23 1976-11-27 Res Inst For Prod Dev Gas detector element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604594A1 (en) * 1986-02-14 1987-08-20 Schott Glaswerke Thin-film gas sensors having high measuring sensitivity as multilayer systems based on dipped indium oxide layers for detection of gas traces in carrier gases

Also Published As

Publication number Publication date
JPS6133466B2 (en) 1986-08-02

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