CN108585793A - A kind of semiconductor ceramic material and preparation method thereof - Google Patents
A kind of semiconductor ceramic material and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to technical field of ceramic material, and in particular to a kind of semiconductor ceramic material.The present invention will mix after barium carbonate and the sieving of chrome green ball milling, then pyroreaction obtains barium chromate frit, it will be mixed after barium carbonate and the honed sieve of titanium dioxide ball, then pyroreaction obtains barium titanate frit, is mixed after obtained barium chromate frit and barium titanate frit are pulverized and sieved, doping silicon dioxide and dimethyl silicone polymer, then carboxymethyl cellulose is added and obtains mixture, it is sieved after mixture ball milling, is then pressed into type, final high temperature is calcined to obtain semiconductive ceramic.The semiconductive ceramic that the present invention is prepared can simultaneously temperature sensor and humidity, sensitive to the reacting condition of temperature and humidity, single one physical parameter or the defect of chemical parameters can only be detected simultaneously by overcoming conventional semiconductors ceramics.
Description
Technical field
The invention belongs to technical field of ceramic material, and in particular to a kind of semiconductor ceramic material and preparation method thereof.
Background technology
Ceramic material is natural or synthetic compound through a kind of inorganic non-metallic material made of overmolding and high-temperature calcination,
Ceramic material can be divided into two major classes according to its performance and purposes：Structural ceramics and function ceramics, function ceramics refer to applying
When mainly utilize its non-mechanical property material, this material usually have one or more functions.Such as electricity, magnetic, light, heat, change
The functions such as, biology, function ceramics type is various, and purposes is different.
Currently, in field of electronic components manufacturing, ceramic semiconductor material is as the material with outstanding semiconducting behavior
Material, is widely used.Semiconductive ceramic has characteristic of semiconductor, conductivity about in the ceramics of 10-6~105S/m.Half
The conductivity of conductive ceramic occurs significantly to become because of the variation of external condition (temperature, illumination, electric field, atmosphere and temperature etc.)
Change, therefore the physical quantity variation of external environment can be changed into electric signal, sensing element for various purposes is made.Semiconductor is made pottery
Ceramic material includes mainly thermal sensitive ceramics, light sensitive ceramics, airsensitive porcelain and humiceram.
Thermal sensitive ceramics is also known as thermistor ceramics, refers to ceramics of the conductivity with temperature in significant change.There are three types of types:①
Negative temperature coefficient thermistor (abbreviation NTC), such as some transition metal such as manganese, iron, cobalt, oxide semiconductor of nickel are ceramic, special
Point is as temperature increases, and resistance exponentially reduces.2. posistor (abbreviation PTC), such as barium titanate of doping half
Conductive ceramic, feature are to increase as temperature increases resistance, and have drastic change in curie point.3. drastic change type thermistor is (referred to as
CTR), such as vanadium oxide and its doped semiconductor ceramics, there is negative temperature coefficient, and in a certain temperature, resistance generates change dramatically, becomes
For change value up to 3~4 orders of magnitude, thermal sensitive ceramics is mainly used for temperature-compensating, temperature measurement, temperature control, detection, overheat
Protection and colour television set demagnetization etc..
Light sensitive ceramics refers to the ceramics with photoconduction or photovoltaic effect, such as cadmium sulfide, cadmium telluride, GaAs, phosphatization
Indium, bismuth germanium oxide etc. ceramics or monocrystalline, when illumination is mapped to its surface conductance increase, be mainly used as the photoswitch automatically controlled and
Solar cell etc..
Airsensitive porcelain refers to the ceramics that conductivity changes as the type of contacted gas molecule is different.Such as zinc oxide, oxygen
Change the ceramics of the systems such as tin, iron oxide, vanadic anhydride, zirconium oxide, nickel oxide and cobalt oxide.Be mainly used for gas with various into
Row leak detection, Disaster prevention and alarm and measurement etc..
Humiceram refers to ceramics of the conductivity with humidity in significant change, such as ferroso-ferric oxide, titanium oxide, potassium oxide-oxygen
Change the ceramics of the systems such as iron, magnesium chromate-titanium oxide and zinc oxide-lithia-vanadium oxide, their conductivity is especially quick to water
Sense, is suitable for use as the measurement and control of humidity.
Recently, control system more systematization, it is desirable to be able to detect two or more physics and chemical parameters, and give
Go out not interfereing with each other the multi-functional sensing element of electric signal.Adapt to the humidity-gas sensitization ceramics and temperature-humidity of this needs
The multifunctional sensitive ceramics such as sensitive ceramic are being developed.
Invention content
In view of the above-mentioned problems of the prior art, the object of the present invention is to provide a kind of while temperature sensor and humidity
Semiconductor ceramic material and preparation method thereof, semiconductor ceramic material of the present invention are sensitive to the reacting condition of temperature and humidity, gram
Single one physical parameter or the defect of chemical parameters can only be detected simultaneously by having taken conventional semiconductors ceramics.
The technical scheme is that：
A kind of semiconductor ceramic material, is made of following raw material：Barium carbonate, chrome green, titanium dioxide, titanium dioxide
Silicon, dimethyl silicone polymer and carboxymethyl cellulose.
Preferably, the ratio of each raw material component is in above-mentioned semiconductor ceramic material：52-75 parts by weight barium carbonate, 2-18
Parts by weight chrome green, 20-28 parts by weight of titanium dioxide, 1-3 parts by weight of silica, 1-3 parts by weight polydimethylsiloxanes
Alkane, 0.5-0.9 parts by weight carboxymethyl celluloses.
The preparation method of above-mentioned semiconductor ceramic material, specifically includes following steps：
(1) ball milling sieving is carried out after mixing a part of barium carbonate and chrome green, then pyroreaction obtains chromic acid
Barium frit；
(2) ball milling is sieved after mixing remaining barium carbonate and titanium dioxide, and then pyroreaction obtains barium titanate frit；
(3) it is mixed after obtained barium chromate frit and barium titanate frit pulverizing and sieving, doping silicon dioxide and poly- diformazan
Radical siloxane；
(4) carboxymethyl cellulose is added and obtains mixture, be sieved after mixture ball milling, be then pressed into type, final high temperature
Calcining obtains semiconductor ceramic material.
Preferably, step (1) and step (2) Ball-milling Time are 12-24 hours.
Preferably, 80-100 mesh sieve is crossed after step (1) and step (2) ball milling.
Preferably, reaction temperature is 1100-1200 DEG C in step (1) and step (2), and the reaction time is 2-4 hours.
Preferably, the weight ratio of barium carbonate is 1 in step (1) and step (2):(1~5).
Preferably, step (3) barium chromate frit and barium titanate frit smash it through 100-120 mesh sieve.
Preferably, 100-120 mesh sieve is crossed in step (4) after mixture ball milling.
Preferably, calcination temperature is 1200-1500 DEG C in step (4).
Preferably, calcination time is 1-2 hours in step (4).
Beneficial effects of the present invention are as follows：
The present invention substitutes the lead element in conventional semiconductors ceramic material using manganese dioxide, overcomes conventional semiconductors pottery
The voltage-dependent of ceramic material, semiconductor ceramic material of the invention is small, and semiconducting behavior is good, has under the high temperature conditions
Lower resistivity.
Specific implementation mode
With reference to embodiment, technical scheme of the present invention is described in further detail, but do not constituted pair
Any restrictions of the present invention.
Embodiment 1
A kind of semiconductor ceramic material, is made of following raw material：72 parts by weight barium carbonates, 5 parts by weight chrome greens, 20
Parts by weight of titanium dioxide, 1.2 parts by weight of silica, 1 parts by weight dimethyl silicone polymer and 0.8 parts by weight carboxymethyl cellulose
Element.
The preparation method of above-mentioned semiconductor ceramic material, specifically includes following steps：
(1) then ball milling 15 hours after mixing barium carbonate and chrome green crossed 80 mesh sieve, anti-in 1100 DEG C of high temperature
It answers 3 hours and obtains barium chromate frit；
(2) ball milling 15 hours after mixing barium carbonate and titanium dioxide, then crosses 80 mesh sieve, in 1100 DEG C of pyroreactions
Obtain barium titanate frit within 2.5 hours；
(3) obtained barium chromate frit and barium titanate frit are crushed and is mixed after crossing 120 mesh sieve, adulterate dioxy
SiClx and dimethyl silicone polymer；
(4) carboxymethyl cellulose is added and obtains mixture, sieved with 100 mesh sieve after mixture ball milling, be then pressed into type, finally
Semiconductor ceramic material is obtained in 1200 DEG C of high-temperature calcinations within 1.5 hours.
The semiconductor ceramic material that the present embodiment is prepared has higher sensitivity to temperature and humidity simultaneously.
Embodiment 2
A kind of semiconductor ceramic material, is made of following raw material：58 parts by weight barium carbonates, 15 parts by weight chrome greens,
22 parts by weight of titanium dioxide, 2.2 parts by weight of silica, 2.3 parts by weight dimethyl silicone polymers and 0.5 parts by weight carboxymethyl are fine
Dimension element.
The preparation method of above-mentioned semiconductor ceramic material, specifically includes following steps：
(1) then ball milling 20 hours after mixing barium carbonate and chrome green crossed 80 mesh sieve, anti-in 1200 DEG C of high temperature
It answers 3 hours and obtains barium chromate frit；
(2) ball milling 15 hours, then sieves with 100 mesh sieve, in 1200 DEG C of pyroreactions 3 after mixing barium carbonate and titanium dioxide
Hour obtains barium titanate frit；
(3) it is mixed after obtained barium chromate frit and barium titanate frit being crushed and sieved with 100 mesh sieve, adulterates dioxy
SiClx and dimethyl silicone polymer；
(4) carboxymethyl cellulose is added and obtains mixture, sieved with 100 mesh sieve after mixture ball milling, be then pressed into type, finally
Semiconductor ceramic material is obtained in 1300 DEG C of high-temperature calcinations within 1 hour.
The semiconductor ceramic material that the present embodiment is prepared has higher sensitivity to temperature and humidity simultaneously.
Embodiment 3
A kind of semiconductor ceramic material, is made of following raw material：65 parts by weight barium carbonates, 9 parts by weight chrome greens, 21
Parts by weight of titanium dioxide, 1.9 parts by weight of silica, 2.5 parts by weight dimethyl silicone polymers and 0.6 parts by weight carboxymethyl cellulose
Element.
The preparation method of above-mentioned semiconductor ceramic material, specifically includes following steps：
(1) ball milling 20 hours, then sieves with 100 mesh sieve, in 1100 DEG C of high temperature after mixing barium carbonate and chrome green
Reaction obtains barium chromate frit in 3 hours；
(2) ball milling 15 hours after mixing barium carbonate and titanium dioxide, then crosses 80 mesh sieve, in 1150 DEG C of pyroreactions 3
Hour obtains barium titanate frit；
(3) obtained barium chromate frit and barium titanate frit are crushed and is mixed after crossing 120 mesh sieve, adulterate dioxy
SiClx and dimethyl silicone polymer；
(4) carboxymethyl cellulose is added and obtains mixture, 120 mesh sieve is crossed after mixture ball milling, is then pressed into type, finally
Semiconductor ceramic material is obtained in 1500 DEG C of high-temperature calcinations within 2 hours.
The semiconductor ceramic material that the present embodiment is prepared has higher sensitivity to temperature and humidity simultaneously.
Embodiment 4
A kind of semiconductor ceramic material, is made of following raw material：52 parts by weight barium carbonates, 18 parts by weight chrome greens,
26 parts by weight of titanium dioxide, 1.5 parts by weight of silica, 1.8 parts by weight dimethyl silicone polymers and 0.7 parts by weight carboxymethyl are fine
Dimension element.
The preparation method of above-mentioned semiconductor ceramic material, specifically includes following steps：
(1) ball milling 24 hours, then sieves with 100 mesh sieve, in 1100 DEG C of high temperature after mixing barium carbonate and chrome green
Reaction obtains barium chromate frit in 4 hours；
(2) ball milling 24 hours, then sieves with 100 mesh sieve, in 1100 DEG C of pyroreactions 3 after mixing barium carbonate and titanium dioxide
Hour obtains barium titanate frit；
(3) obtained barium chromate frit and barium titanate frit are crushed and is mixed after crossing 120 mesh sieve, adulterate dioxy
SiClx and dimethyl silicone polymer；
(4) carboxymethyl cellulose is added and obtains mixture, 120 mesh sieve is crossed after mixture ball milling, is then pressed into type, finally
Semiconductor ceramic material is obtained in 1200 DEG C of high-temperature calcinations within 2 hours.
The semiconductor ceramic material that the present embodiment is prepared has higher sensitivity to temperature and humidity simultaneously.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (10)
1. a kind of semiconductor ceramic material, which is characterized in that the semiconductor ceramic material is made of following raw material：Barium carbonate,
Chrome green, titanium dioxide, silica, dimethyl silicone polymer and carboxymethyl cellulose.
2. a kind of semiconductor ceramic material according to claim 1, which is characterized in that each in the semiconductor ceramic material
The ratio of raw material components is：52-75 parts by weight barium carbonate, 2-18 parts by weight chrome green, 20-28 parts by weight of titanium dioxide,
1-3 parts by weight of silica, 1-3 parts by weight dimethyl silicone polymer, 0.5-0.9 parts by weight carboxymethyl celluloses.
3. a kind of preparation method of semiconductor ceramic material as claimed in claim 1 or 2, which is characterized in that include the following steps：
(1) ball milling sieving is carried out after mixing a part of barium carbonate and chrome green, then it is molten to obtain barium chromate for pyroreaction
Block；
(2) ball milling is sieved after mixing remaining barium carbonate and titanium dioxide, and then pyroreaction obtains barium titanate frit；
(3) it is mixed after obtained barium chromate frit and barium titanate frit pulverizing and sieving, doping silicon dioxide and poly dimethyl silicon
Oxygen alkane；
(4) carboxymethyl cellulose is added and obtains mixture, be sieved after mixture ball milling, be then pressed into type, final high temperature calcining
Obtain semiconductor ceramic material.
4. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step (1) and step
Suddenly (2) Ball-milling Time is 12-24 hours；The sieving referred to 80-100 mesh sieve.
5. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step (1) and step
Suddenly the weight ratio of barium carbonate is 1 in (2):(1~5).
6. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step (1) and step
Suddenly reaction temperature is 1100-1200 DEG C in (2), and the reaction time is 2-4 hours.
7. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step (3) chromic acid
Barium frit and barium titanate frit smash it through 100-120 mesh sieve.
8. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that mixed in step (4)
100-120 mesh sieve is crossed after closing pellet mill.
9. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step is forged in (4)
It is 1200-1500 DEG C to burn temperature.
10. a kind of preparation method of semiconductor ceramic material according to claim 3, which is characterized in that step is forged in (4)
It is 1-2 hours to burn the time.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114685162A (en) * | 2020-12-31 | 2022-07-01 | 陕西理工大学 | Preparation method of semiconductor ceramic material |
| CN115331902A (en) * | 2022-05-26 | 2022-11-11 | 昆山聚达电子有限公司 | PTC thermistor element processing technology |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509601A (en) * | 2011-10-12 | 2012-06-20 | 华中科技大学 | Preparation method of barium titanate PTC (positive temperature coefficient) ceramic |
| CN102503408A (en) * | 2011-10-12 | 2012-06-20 | 华中科技大学 | Preparation method of laminated barium titanate PTC (positive temperature coefficient) ceramic |
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2018
- 2018-07-07 CN CN201810740306.9A patent/CN108585793B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509601A (en) * | 2011-10-12 | 2012-06-20 | 华中科技大学 | Preparation method of barium titanate PTC (positive temperature coefficient) ceramic |
| CN102503408A (en) * | 2011-10-12 | 2012-06-20 | 华中科技大学 | Preparation method of laminated barium titanate PTC (positive temperature coefficient) ceramic |
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|---|
| 焦宝祥: "《功能与信息材料》", 31 May 2011, 华东理工大学出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114685162A (en) * | 2020-12-31 | 2022-07-01 | 陕西理工大学 | Preparation method of semiconductor ceramic material |
| CN115331902A (en) * | 2022-05-26 | 2022-11-11 | 昆山聚达电子有限公司 | PTC thermistor element processing technology |
| CN115331902B (en) * | 2022-05-26 | 2024-04-02 | 昆山聚达电子有限公司 | PTC thermistor element processing technology |
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