JPS57101000A - Preparation of ceramic whisker - Google Patents
Preparation of ceramic whiskerInfo
- Publication number
- JPS57101000A JPS57101000A JP55176244A JP17624480A JPS57101000A JP S57101000 A JPS57101000 A JP S57101000A JP 55176244 A JP55176244 A JP 55176244A JP 17624480 A JP17624480 A JP 17624480A JP S57101000 A JPS57101000 A JP S57101000A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- whiskers
- reaction tube
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 2
- 239000003638 chemical reducing agent Substances 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000001569 carbon dioxide Substances 0.000 abstract 1
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176244A JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176244A JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57101000A true JPS57101000A (en) | 1982-06-23 |
| JPS644999B2 JPS644999B2 (enrdf_load_html_response) | 1989-01-27 |
Family
ID=16010159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55176244A Granted JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57101000A (enrdf_load_html_response) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158200A (ja) * | 1985-12-30 | 1987-07-14 | アメリカ合衆国 | 炭化ケイ素ホイスカーの製造方法 |
| JPS63159299A (ja) * | 1986-12-20 | 1988-07-02 | Kobe Steel Ltd | 炭化ケイ素ウイスカ−の製造方法 |
| JPH01108108A (ja) * | 1987-10-20 | 1989-04-25 | Agency Of Ind Science & Technol | 繊維状珪素・酸素・炭素系化合物の製造方法 |
| FR2684091A1 (fr) * | 1991-11-21 | 1993-05-28 | Pechiney Recherche | Procede de fabrication de carbures metalliques a grande surface specifique sous balayage de gaz inerte a pression atmospherique. |
| CN109594100A (zh) * | 2018-12-07 | 2019-04-09 | 东华大学 | 一种C3N4负载Cu/Sn合金材料及其制备和应用 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922320A (enrdf_load_html_response) * | 1972-06-23 | 1974-02-27 | ||
| JPS504480A (enrdf_load_html_response) * | 1973-05-17 | 1975-01-17 | ||
| JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
| JPS56100115A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon nitride whisker |
| JPS56100125A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon carbide whisker |
-
1980
- 1980-12-12 JP JP55176244A patent/JPS57101000A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922320A (enrdf_load_html_response) * | 1972-06-23 | 1974-02-27 | ||
| JPS504480A (enrdf_load_html_response) * | 1973-05-17 | 1975-01-17 | ||
| JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
| JPS56100115A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon nitride whisker |
| JPS56100125A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon carbide whisker |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62158200A (ja) * | 1985-12-30 | 1987-07-14 | アメリカ合衆国 | 炭化ケイ素ホイスカーの製造方法 |
| JPS63159299A (ja) * | 1986-12-20 | 1988-07-02 | Kobe Steel Ltd | 炭化ケイ素ウイスカ−の製造方法 |
| JPH01108108A (ja) * | 1987-10-20 | 1989-04-25 | Agency Of Ind Science & Technol | 繊維状珪素・酸素・炭素系化合物の製造方法 |
| FR2684091A1 (fr) * | 1991-11-21 | 1993-05-28 | Pechiney Recherche | Procede de fabrication de carbures metalliques a grande surface specifique sous balayage de gaz inerte a pression atmospherique. |
| CN109594100A (zh) * | 2018-12-07 | 2019-04-09 | 东华大学 | 一种C3N4负载Cu/Sn合金材料及其制备和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS644999B2 (enrdf_load_html_response) | 1989-01-27 |
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