JPS57100432A - Electrostatic recording body - Google Patents
Electrostatic recording bodyInfo
- Publication number
- JPS57100432A JPS57100432A JP17737480A JP17737480A JPS57100432A JP S57100432 A JPS57100432 A JP S57100432A JP 17737480 A JP17737480 A JP 17737480A JP 17737480 A JP17737480 A JP 17737480A JP S57100432 A JPS57100432 A JP S57100432A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- low resistance
- oxide semiconductor
- substrate
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/10—Bases for charge-receiving or other layers
- G03G5/102—Bases for charge-receiving or other layers consisting of or comprising metals
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE:To obtain recording having particularly superior moisture resistance characteristics, high density and high resolving power, and make a low resistance layer stickable and formable on a drum-like substrate as well by sticking a slight amt. of a metal oxide semiconductor to form the low resistance layer. CONSTITUTION:A low resistance layer 2 of 10<6>-10<8>OMEGA surface specific resistance values and 3,000Angstrom thickness is stuck and formed on the outside circumferential surface of a substrate 1 of a drum shape consisting of ''Pyrex '' glass by sputtering using copper of >=99.9% purity in a vacuum chamber of 10<-3>Torr oxygen pressure. A linear satd. polyester resin is coated on the layer 2 to form a dielectric layer 3 of 3-4mum thickness, whereby an electrostatic recording body 4 is obtd. The metal for forming the layer 2 may be Ni, Co, Fe, Cr, Zn, Al, Ti, Cd... etc., and may be formed by vacuum deposition or ion plating. The superior moisture resistance characteristics are probably contributed by the electron conductivity of the metal oxide semiconductor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17737480A JPS57100432A (en) | 1980-12-16 | 1980-12-16 | Electrostatic recording body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17737480A JPS57100432A (en) | 1980-12-16 | 1980-12-16 | Electrostatic recording body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57100432A true JPS57100432A (en) | 1982-06-22 |
Family
ID=16029828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17737480A Pending JPS57100432A (en) | 1980-12-16 | 1980-12-16 | Electrostatic recording body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100432A (en) |
-
1980
- 1980-12-16 JP JP17737480A patent/JPS57100432A/en active Pending
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