JPS5698472A - Vacuum-depositing method - Google Patents
Vacuum-depositing methodInfo
- Publication number
- JPS5698472A JPS5698472A JP29180A JP29180A JPS5698472A JP S5698472 A JPS5698472 A JP S5698472A JP 29180 A JP29180 A JP 29180A JP 29180 A JP29180 A JP 29180A JP S5698472 A JPS5698472 A JP S5698472A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- space
- substance
- droplets
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Abstract
PURPOSE:To produce a vacuum-deposited film free of coarse grains by a method wherein a substrate is placed at the side of flight space for vapor particles of a substance in such a manner as to be faced toward the center of the space, and an electric or magnetic field is generated in the space so as to deflect the flying direction of the vapor particles toward the substrate. CONSTITUTION:The substance 3 evaporated by heating a vapor source 4 flying upward, is ionized by glow discharge, for instance, and reaches the flight space 5. At the side of the flight space 5 is placed the substrate 6 in such a manner as to be faced inwards, with a other electrode 7 provided opposite to the substrate 6. For example, the substrate 6 is connected to the negative electrode of a power source 8, generating the electric field in the space 5. Accordingly, the particles P of the evaporated substance 3 are deflected by the field and are deposited on the substrate 6 having a negative potential. On the other hand, droplets S of molten substance from the vapor source 4 is not charged and the large mass of the droplets S prevents them from being deflected, so that the droplets do not reach the substrate 6. The magnetic field may be generated in the flight space 5, singly or together with the electric field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29180A JPS5698472A (en) | 1980-01-08 | 1980-01-08 | Vacuum-depositing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29180A JPS5698472A (en) | 1980-01-08 | 1980-01-08 | Vacuum-depositing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5698472A true JPS5698472A (en) | 1981-08-07 |
Family
ID=11469797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29180A Pending JPS5698472A (en) | 1980-01-08 | 1980-01-08 | Vacuum-depositing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698472A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0141417A2 (en) * | 1983-11-07 | 1985-05-15 | Hitachi, Ltd. | Apparatus for forming film by ion beam |
-
1980
- 1980-01-08 JP JP29180A patent/JPS5698472A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0141417A2 (en) * | 1983-11-07 | 1985-05-15 | Hitachi, Ltd. | Apparatus for forming film by ion beam |
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