JPS5694578A - Strogeecell volumetriccsignal read circuit - Google Patents

Strogeecell volumetriccsignal read circuit

Info

Publication number
JPS5694578A
JPS5694578A JP17393980A JP17393980A JPS5694578A JP S5694578 A JPS5694578 A JP S5694578A JP 17393980 A JP17393980 A JP 17393980A JP 17393980 A JP17393980 A JP 17393980A JP S5694578 A JPS5694578 A JP S5694578A
Authority
JP
Japan
Prior art keywords
volumetriccsignal
strogeecell
read circuit
read
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17393980A
Other languages
English (en)
Other versions
JPS611837B2 (ja
Inventor
Buroshiyu Rudorufu
Haa Haimeieru Herumiyuuto
Kurein Birufuriido
Bierunitsuku Furiidoritsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5694578A publication Critical patent/JPS5694578A/ja
Publication of JPS611837B2 publication Critical patent/JPS611837B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP17393980A 1979-12-22 1980-12-11 Strogeecell volumetriccsignal read circuit Granted JPS5694578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792951945 DE2951945A1 (de) 1979-12-22 1979-12-22 Schaltungsanordnung zur kapazitiven lesesignalverstaerkung in einem integrierten halbleiterspeicher mit einem intergrierten halbleiterspeicher mit speicherzellen in mtl-technik

Publications (2)

Publication Number Publication Date
JPS5694578A true JPS5694578A (en) 1981-07-31
JPS611837B2 JPS611837B2 (ja) 1986-01-20

Family

ID=6089375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17393980A Granted JPS5694578A (en) 1979-12-22 1980-12-11 Strogeecell volumetriccsignal read circuit

Country Status (4)

Country Link
US (1) US4397002A (ja)
EP (1) EP0031001B1 (ja)
JP (1) JPS5694578A (ja)
DE (2) DE2951945A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078335B1 (de) * 1981-10-30 1986-02-05 Ibm Deutschland Gmbh Verfahren zum Lesen eines Halbleiterspeichers
EP0164247B1 (en) * 1984-06-07 1989-01-11 Pfizer Limited Dihydropyridines
US4658377A (en) * 1984-07-26 1987-04-14 Texas Instruments Incorporated Dynamic memory array with segmented bit lines
USRE33694E (en) * 1984-07-26 1991-09-17 Texas Instruments Incorporated Dynamic memory array with segmented bit lines
US4905265A (en) * 1985-12-11 1990-02-27 General Imaging Corporation X-ray imaging system and solid state detector therefor
JPH0289820U (ja) * 1988-12-28 1990-07-17
US5596200A (en) * 1992-10-14 1997-01-21 Primex Low dose mammography system
US5907251A (en) * 1996-11-22 1999-05-25 International Business Machines Corp. Low voltage swing capacitive bus driver device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3816758A (en) * 1971-04-14 1974-06-11 Ibm Digital logic circuit
DE2457921C2 (de) * 1974-12-07 1976-12-09 Ibm Deutschland Verfahren und schaltungsanordnung zur erhoehung der schreibgeschwindigkeit in integrierten datenspeichern
FR2304991A1 (fr) * 1975-03-15 1976-10-15 Ibm Agencement de circuits pour memoire semi-conductrice et son procede de fonctionnement
US4007451A (en) * 1975-05-30 1977-02-08 International Business Machines Corporation Method and circuit arrangement for operating a highly integrated monolithic information store
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
US4168539A (en) * 1978-09-15 1979-09-18 Gte Laboratories Incorporated Memory system with row clamping arrangement
DE2855866C3 (de) * 1978-12-22 1981-10-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Betreiben eines integrierten Halbleiterspeichers

Also Published As

Publication number Publication date
US4397002A (en) 1983-08-02
EP0031001A2 (de) 1981-07-01
EP0031001A3 (en) 1981-07-15
EP0031001B1 (de) 1983-11-16
JPS611837B2 (ja) 1986-01-20
DE3065622D1 (en) 1983-12-22
DE2951945A1 (de) 1981-07-02

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