JPS5691440A - Method for evaluating and producing semiconductor crystal - Google Patents

Method for evaluating and producing semiconductor crystal

Info

Publication number
JPS5691440A
JPS5691440A JP16837479A JP16837479A JPS5691440A JP S5691440 A JPS5691440 A JP S5691440A JP 16837479 A JP16837479 A JP 16837479A JP 16837479 A JP16837479 A JP 16837479A JP S5691440 A JPS5691440 A JP S5691440A
Authority
JP
Japan
Prior art keywords
openings
epitaxial layer
crystal
type
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16837479A
Other languages
Japanese (ja)
Inventor
Setsuo Kuwatani
Heiji Moroshima
Hideo Tanbara
Masato Fujita
Seiichi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16837479A priority Critical patent/JPS5691440A/en
Publication of JPS5691440A publication Critical patent/JPS5691440A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To evaluate a crystal accurately from its impurity distribution by providing the measuring terminals of P-N junctions or Schottky barriers on the measured surface of a semiconductor crystal to obtain capacitance-voltage characteristics and computing the depth of a depletion layer and the concentration of immurities from the results. CONSTITUTION:When evaluting a crystal for a varicap diode, an N<+> type Si substrate with an N type epitaxial layer 1 is prepared and an oxide film 3 with openings 4 is formed over the epitaxial layer 1. Four of such openings positioning at the apexes of a square are grouped into one set and five sets are provided in the center and the peripheral parts of the quarters of the wafer. P type regions 5 are provided in the epitaxial layer through the openings and C-V characteristics are measured with a measuring electrode. The concentration of impurities and the depth of a depletion layer are computed from the characteristics and impurity distribution is determined. And from the results of the five positions, the wafer is judged to be good or bad. By so doing, the accuracy of evaluating crystals is improved and their available percentage can be increased. Schottky barrier diodes can also be evaluated in the same way.
JP16837479A 1979-12-26 1979-12-26 Method for evaluating and producing semiconductor crystal Pending JPS5691440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16837479A JPS5691440A (en) 1979-12-26 1979-12-26 Method for evaluating and producing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16837479A JPS5691440A (en) 1979-12-26 1979-12-26 Method for evaluating and producing semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5691440A true JPS5691440A (en) 1981-07-24

Family

ID=15866904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16837479A Pending JPS5691440A (en) 1979-12-26 1979-12-26 Method for evaluating and producing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5691440A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306754A (en) * 1995-04-27 1996-11-22 Nec Corp Method for measuring impurity diffusion profile
JP2011129650A (en) * 2009-12-16 2011-06-30 Sumco Corp Dlts measuring electrode and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306754A (en) * 1995-04-27 1996-11-22 Nec Corp Method for measuring impurity diffusion profile
JP2011129650A (en) * 2009-12-16 2011-06-30 Sumco Corp Dlts measuring electrode and method of manufacturing the same

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