JPS5688328A - Gold wire for bonding semiconductor element and semiconductor element - Google Patents

Gold wire for bonding semiconductor element and semiconductor element

Info

Publication number
JPS5688328A
JPS5688328A JP16614679A JP16614679A JPS5688328A JP S5688328 A JPS5688328 A JP S5688328A JP 16614679 A JP16614679 A JP 16614679A JP 16614679 A JP16614679 A JP 16614679A JP S5688328 A JPS5688328 A JP S5688328A
Authority
JP
Japan
Prior art keywords
bonding
weight ppm
wire
gold wire
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16614679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63949B2 (enrdf_load_stackoverflow
Inventor
Shozo Hayashi
Susumu Tomiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP16614679A priority Critical patent/JPS5688328A/ja
Priority to US06/160,302 priority patent/US4330329A/en
Priority to DE3023623A priority patent/DE3023623C2/de
Priority to GB8021205A priority patent/GB2063913B/en
Publication of JPS5688328A publication Critical patent/JPS5688328A/ja
Publication of JPS63949B2 publication Critical patent/JPS63949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/02Alloys based on gold
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
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    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01L2924/01012Magnesium [Mg]
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    • H01L2924/01013Aluminum [Al]
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    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
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    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
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    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
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    • H01L2924/01024Chromium [Cr]
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    • H01L2924/01025Manganese [Mn]
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    • H01L2924/01027Cobalt [Co]
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    • H01L2924/01028Nickel [Ni]
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    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01031Gallium [Ga]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
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    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
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    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
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    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
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    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
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    • H01L2924/01083Bismuth [Bi]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
JP16614679A 1979-11-28 1979-12-19 Gold wire for bonding semiconductor element and semiconductor element Granted JPS5688328A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16614679A JPS5688328A (en) 1979-12-19 1979-12-19 Gold wire for bonding semiconductor element and semiconductor element
US06/160,302 US4330329A (en) 1979-11-28 1980-06-17 Gold bonding wire for semiconductor elements and the semiconductor element
DE3023623A DE3023623C2 (de) 1979-11-28 1980-06-24 Gold-Verbindungsdraht für Halbleiterelemente und dessen Verwendung für Verbindungsstellen einer Silicium-Chip-Elektrode in Halbleiterelementen
GB8021205A GB2063913B (en) 1979-11-28 1980-06-27 Gold wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16614679A JPS5688328A (en) 1979-12-19 1979-12-19 Gold wire for bonding semiconductor element and semiconductor element

Publications (2)

Publication Number Publication Date
JPS5688328A true JPS5688328A (en) 1981-07-17
JPS63949B2 JPS63949B2 (enrdf_load_stackoverflow) 1988-01-09

Family

ID=15825897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16614679A Granted JPS5688328A (en) 1979-11-28 1979-12-19 Gold wire for bonding semiconductor element and semiconductor element

Country Status (1)

Country Link
JP (1) JPS5688328A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298219A (en) * 1990-06-04 1994-03-29 Tanaka Denshi Kogyo Kabushiki Kaisha High purity gold bonding wire for semiconductor device
US6123786A (en) * 1993-09-06 2000-09-26 Mitsubishi Materials Corporation Gold materials for accessories hardened with minor alloying components
US6991854B2 (en) * 2003-04-14 2006-01-31 Mk Electron Co., Ltd. Gold alloy bonding wire for semiconductor device
CN115178913A (zh) * 2022-09-13 2022-10-14 中国航发北京航空材料研究院 一种钎料及其制备方法和钎焊方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01155266U (enrdf_load_stackoverflow) * 1988-04-18 1989-10-25

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) * 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251867A (en) * 1975-10-23 1977-04-26 Nec Corp Bonding wire for semiconductor device
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298219A (en) * 1990-06-04 1994-03-29 Tanaka Denshi Kogyo Kabushiki Kaisha High purity gold bonding wire for semiconductor device
US5538685A (en) * 1990-06-04 1996-07-23 Tanaka Denshi Kogyo Kabushiki Kaisha Palladium bonding wire for semiconductor device
US6123786A (en) * 1993-09-06 2000-09-26 Mitsubishi Materials Corporation Gold materials for accessories hardened with minor alloying components
US6991854B2 (en) * 2003-04-14 2006-01-31 Mk Electron Co., Ltd. Gold alloy bonding wire for semiconductor device
CN115178913A (zh) * 2022-09-13 2022-10-14 中国航发北京航空材料研究院 一种钎料及其制备方法和钎焊方法
CN115178913B (zh) * 2022-09-13 2023-01-10 中国航发北京航空材料研究院 一种钎料及其制备方法和钎焊方法

Also Published As

Publication number Publication date
JPS63949B2 (enrdf_load_stackoverflow) 1988-01-09

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