JPS5681976A - Manufacture of pressure-sensitive diaphragm - Google Patents
Manufacture of pressure-sensitive diaphragmInfo
- Publication number
- JPS5681976A JPS5681976A JP15845779A JP15845779A JPS5681976A JP S5681976 A JPS5681976 A JP S5681976A JP 15845779 A JP15845779 A JP 15845779A JP 15845779 A JP15845779 A JP 15845779A JP S5681976 A JPS5681976 A JP S5681976A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- gauge
- film
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 230000003014 reinforcing effect Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
PURPOSE:To obtain a diaphragm having preferable flatness by forming a strain gauge at the center of a monocrystalline Si substrate, growing a reinforcing polycrystalline Si layer on the entire surface including the strain gauge, and forming an etching stopping film on the gauge beforehand when removing the reinforcing layer on the gauge by etching. CONSTITUTION:A strain gauge 2 is diffused at the center on a monocrystalline Si substrate 1, and a film 5 of SiO2 or Si3N4 not etched with etchant in the step of etching later is covered on the entire surface including the gauge. Then, reinforcing polycrystalline Si layer 6 are accumulated thereon, the back surface of the substrate 1 is lapped, thereby forming the thickness in a thickness l adapted for a diaphragm. Thereafter, an etching mask 4 is formed on the periphery of the polycrystalline Si layer 6 on the surface, is etched, and the exposed region of the layer 6 is removed. When the film 5 is exposed due to the existence of the film 5 formed previously, the etching is automatically stopped, thereby obtaining desired flat diaphragm thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15845779A JPS5681976A (en) | 1979-12-06 | 1979-12-06 | Manufacture of pressure-sensitive diaphragm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15845779A JPS5681976A (en) | 1979-12-06 | 1979-12-06 | Manufacture of pressure-sensitive diaphragm |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5681976A true JPS5681976A (en) | 1981-07-04 |
Family
ID=15672159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15845779A Pending JPS5681976A (en) | 1979-12-06 | 1979-12-06 | Manufacture of pressure-sensitive diaphragm |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110000060A1 (en) * | 2009-07-06 | 2011-01-06 | KAIST (Korea Advanced Institute of Science and Technology) | Flexible piezoelectric device and flexible capacitor manufactured by the same, and manufacturing method for flexible sensors |
-
1979
- 1979-12-06 JP JP15845779A patent/JPS5681976A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110000060A1 (en) * | 2009-07-06 | 2011-01-06 | KAIST (Korea Advanced Institute of Science and Technology) | Flexible piezoelectric device and flexible capacitor manufactured by the same, and manufacturing method for flexible sensors |
| US8661634B2 (en) * | 2009-07-06 | 2014-03-04 | KAIST (Korea Advanced Institute of Science and Technology | Method of manufacturing a flexible piezoelectric device |
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