JPS5681925A - Method of manufacturing semiconductor forming element made of amorphous silicon for converting light into electric energy and device for executing same - Google Patents

Method of manufacturing semiconductor forming element made of amorphous silicon for converting light into electric energy and device for executing same

Info

Publication number
JPS5681925A
JPS5681925A JP14212180A JP14212180A JPS5681925A JP S5681925 A JPS5681925 A JP S5681925A JP 14212180 A JP14212180 A JP 14212180A JP 14212180 A JP14212180 A JP 14212180A JP S5681925 A JPS5681925 A JP S5681925A
Authority
JP
Japan
Prior art keywords
electric energy
amorphous silicon
forming element
element made
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14212180A
Other languages
English (en)
Inventor
Uinterurinku Geruharuto
Kenigeru Matsukusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Messerschmitt Bolkow Blohm AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Bolkow Blohm AG filed Critical Messerschmitt Bolkow Blohm AG
Publication of JPS5681925A publication Critical patent/JPS5681925A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S204/00—Chemistry: electrical and wave energy
    • Y10S204/05—Magnetic plus electrolytic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP14212180A 1979-10-13 1980-10-13 Method of manufacturing semiconductor forming element made of amorphous silicon for converting light into electric energy and device for executing same Pending JPS5681925A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2941559A DE2941559C2 (de) 1979-10-13 1979-10-13 Verfahren zum Abscheiden von Silizium auf einem Substrat

Publications (1)

Publication Number Publication Date
JPS5681925A true JPS5681925A (en) 1981-07-04

Family

ID=6083435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14212180A Pending JPS5681925A (en) 1979-10-13 1980-10-13 Method of manufacturing semiconductor forming element made of amorphous silicon for converting light into electric energy and device for executing same

Country Status (4)

Country Link
US (1) US4369205A (ja)
EP (1) EP0027553B1 (ja)
JP (1) JPS5681925A (ja)
DE (1) DE2941559C2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132920A (ja) * 1982-02-01 1983-08-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系半導体の製造方法
JPS60208823A (ja) * 1984-04-02 1985-10-21 Matsushita Electric Ind Co Ltd 薄膜の製造方法
JPH0597412A (ja) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd アモルフアス多元系半導体素子
JPH0597413A (ja) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd アモルフアス多元系半導体および該半導体を用いた素子

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0066787B1 (en) * 1981-05-29 1989-11-15 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Process for preparing amorphous silicon semiconductor
US4705913A (en) * 1981-11-02 1987-11-10 Campbell Iii William P Amorphous silicon devices and method of producing
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
US4438154A (en) 1982-04-28 1984-03-20 Stanley Electric Co., Ltd. Method of fabricating an amorphous silicon film
DE3241504A1 (de) * 1982-10-21 1984-04-26 Basf Farben + Fasern Ag, 2000 Hamburg Vorrichtung und verfahren zum elekrtostatischen ueberziehen von gegenstaenden mit fluiden
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JPS59159167A (ja) * 1983-03-01 1984-09-08 Zenko Hirose アモルフアスシリコン膜の形成方法
JPS6066422A (ja) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd 半導体製造法
US4512284A (en) * 1983-12-19 1985-04-23 Rca Corporation Glow discharge apparatus for use in coating a disc-shaped substrate
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
DE3442208C3 (de) * 1984-11-19 1998-06-10 Leybold Ag Verfahren und Vorrichtung zum Herstellen harter Kohlenstoffschichten
DE3524997A1 (de) * 1985-07-12 1987-01-15 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
US4974543A (en) * 1986-02-28 1990-12-04 Xerox Corporation Apparatus for amorphous silicon film
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
EP0273741B1 (en) * 1986-12-29 1991-10-23 Sumitomo Metal Industries, Ltd. Plasma apparatus
US5039381A (en) * 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
JPH084708B2 (ja) * 1989-11-08 1996-01-24 三井東圧化学株式会社 排ガス処理装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
US10947755B2 (en) 2016-03-03 2021-03-16 Southco, Inc. Latch mechanism with status indicator
CN106282963B (zh) * 2016-09-21 2019-04-05 中国科学院上海微系统与信息技术研究所 基于磁场干扰等离子体的非晶硅生长方法及装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3655438A (en) * 1969-10-20 1972-04-11 Int Standard Electric Corp Method of forming silicon oxide coatings in an electric discharge
DE2306076A1 (de) * 1973-02-08 1974-08-15 Helmut Bornhoeft Kombinierte nebelschluss-bremsleuchte
US4022947A (en) * 1975-11-06 1977-05-10 Airco, Inc. Transparent panel having high reflectivity for solar radiation and a method for preparing same
US4196438A (en) * 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
GB1544612A (en) * 1978-01-04 1979-04-25 Dmitriev J Apparatus for ion plasma coating of articles

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435172A (en) * 1977-08-24 1979-03-15 Anelva Corp Chemical reactor using electric discharge

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58132920A (ja) * 1982-02-01 1983-08-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系半導体の製造方法
JPH0597412A (ja) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd アモルフアス多元系半導体素子
JPH0597413A (ja) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd アモルフアス多元系半導体および該半導体を用いた素子
JPS60208823A (ja) * 1984-04-02 1985-10-21 Matsushita Electric Ind Co Ltd 薄膜の製造方法

Also Published As

Publication number Publication date
DE2941559A1 (de) 1981-04-23
EP0027553A1 (de) 1981-04-29
DE2941559C2 (de) 1983-03-03
EP0027553B1 (de) 1983-05-25
US4369205A (en) 1983-01-18

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