JPS5678495A - Preparation of base - Google Patents
Preparation of baseInfo
- Publication number
- JPS5678495A JPS5678495A JP15360079A JP15360079A JPS5678495A JP S5678495 A JPS5678495 A JP S5678495A JP 15360079 A JP15360079 A JP 15360079A JP 15360079 A JP15360079 A JP 15360079A JP S5678495 A JPS5678495 A JP S5678495A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- layer
- substrate
- base
- cavities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 abstract 8
- 239000000758 substrate Substances 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15360079A JPS5678495A (en) | 1979-11-29 | 1979-11-29 | Preparation of base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15360079A JPS5678495A (en) | 1979-11-29 | 1979-11-29 | Preparation of base |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678495A true JPS5678495A (en) | 1981-06-27 |
| JPS612629B2 JPS612629B2 (https=) | 1986-01-27 |
Family
ID=15566020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15360079A Granted JPS5678495A (en) | 1979-11-29 | 1979-11-29 | Preparation of base |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678495A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880831A (ja) * | 1981-11-10 | 1983-05-16 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
| JPS58156591A (ja) * | 1982-03-10 | 1983-09-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体単結晶薄膜の形成法 |
| JPS59124123A (ja) * | 1982-12-28 | 1984-07-18 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
-
1979
- 1979-11-29 JP JP15360079A patent/JPS5678495A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880831A (ja) * | 1981-11-10 | 1983-05-16 | Fujitsu Ltd | 半導体装置用基板の製造方法 |
| JPS58156591A (ja) * | 1982-03-10 | 1983-09-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体単結晶薄膜の形成法 |
| JPS59124123A (ja) * | 1982-12-28 | 1984-07-18 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612629B2 (https=) | 1986-01-27 |
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