JPS5674900A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5674900A
JPS5674900A JP15103379A JP15103379A JPS5674900A JP S5674900 A JPS5674900 A JP S5674900A JP 15103379 A JP15103379 A JP 15103379A JP 15103379 A JP15103379 A JP 15103379A JP S5674900 A JPS5674900 A JP S5674900A
Authority
JP
Japan
Prior art keywords
address
storage
cell
defective
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15103379A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Shiragasawa
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15103379A priority Critical patent/JPS5674900A/en
Publication of JPS5674900A publication Critical patent/JPS5674900A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make it possible to use a cell array as a good semiconductor storage device even when there are defective cells on the cell array, by installing an increased storage cell.
CONSTITUTION: When any defective cell is detected in storage cell array 5 by inspection, the storage instruction signal is generated from the inspection device to control terminal 16, and X address information of the defective cell is stored at bad address storage section 10. When this X address of defective cell is accessed, the address signal from X address terminal 1 and the address signal from bad address storage section 10 are compared to each other, and the address coincidence signal is output to output terminal 11 of coincidence circuit 9. This coincidence signal controlls X decoder 3 and does not select any of both X addresses but selects increased storage section 15. Since the increased storage storage cell is selected forcibly even when any defective cell exists as mentioned above, the cell array can be used as a good semiconductor storage.
COPYRIGHT: (C)1981,JPO&Japio
JP15103379A 1979-11-20 1979-11-20 Semiconductor storage device Pending JPS5674900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15103379A JPS5674900A (en) 1979-11-20 1979-11-20 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15103379A JPS5674900A (en) 1979-11-20 1979-11-20 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5674900A true JPS5674900A (en) 1981-06-20

Family

ID=15509826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15103379A Pending JPS5674900A (en) 1979-11-20 1979-11-20 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5674900A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198348A (en) * 1985-02-28 1986-09-02 Nec Corp Memory package
JPS6425264A (en) * 1987-07-22 1989-01-27 Hitachi Ltd Multi chip memory module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198348A (en) * 1985-02-28 1986-09-02 Nec Corp Memory package
JPS6425264A (en) * 1987-07-22 1989-01-27 Hitachi Ltd Multi chip memory module

Similar Documents

Publication Publication Date Title
JPS5589980A (en) Semiconductor memory unit
MY100970A (en) Semiconductor memory device
JPS57105897A (en) Semiconductor storage device
JPS52142936A (en) Semiconductor memory circuit
JPS563499A (en) Semiconductor memory device
GB8524042D0 (en) Semiconductor memory
JPS5363939A (en) Dynamic memory unit
JPS5674900A (en) Semiconductor storage device
JPS55105760A (en) Memory control unit
JPS57164481A (en) Storage device
JPS55163697A (en) Memory device
JPS57210500A (en) Semiconductor storage device
JPS54106133A (en) Buffer memory fault control system
JPS5496935A (en) Memory module
JPS55105898A (en) Semiconductor memory device
JPS5668838A (en) Data control unit
JPS54136181A (en) Test method for semiconductor memory unit of tri-state output
JPS5395532A (en) Error correction system for read only memory unit
JPS5578357A (en) Program overrun detection unit
JPS57172598A (en) Nonvolatile semiconductor memory
JPS5371538A (en) Memory unit
JPS57150198A (en) Semiconductor storage device
JPS55140944A (en) Microorder address storing device
JPS55157177A (en) Semiconductor memory device
JPS57130282A (en) Access control circuit for magnetic bubble memory