JPS567435A - Applying device for viscous liquid for semiconductor wafer - Google Patents

Applying device for viscous liquid for semiconductor wafer

Info

Publication number
JPS567435A
JPS567435A JP8286379A JP8286379A JPS567435A JP S567435 A JPS567435 A JP S567435A JP 8286379 A JP8286379 A JP 8286379A JP 8286379 A JP8286379 A JP 8286379A JP S567435 A JPS567435 A JP S567435A
Authority
JP
Japan
Prior art keywords
ring
suspended matter
electric charge
charged
stringy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8286379A
Other languages
Japanese (ja)
Inventor
Fumihiro Honda
Jiyouji Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8286379A priority Critical patent/JPS567435A/en
Publication of JPS567435A publication Critical patent/JPS567435A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the repetitive adhesion of stringy suspended matter onto a film surface by a mechanism wherein a charged body is disposed into a receiving cover and the stringy suspended matter is removed by means of electrostatic adsorption. CONSTITUTION:A dielectric ring 6 made of a material, which can charge electric charge, is arranged in a shape that is brought near to an inner circumferential portion of a receiving cover 1. A shaft portion 6a is rubbed by using a belt 10 stretched between a pulley 9 and the shaft portion 6a of the ring 6, and electric charge is charged to the ring 6. Consequently, when a viscous liquid 5 is applied on a semiconductor wafer 4 according to a centrifugal method, i.e. when a shaft 2 is turned and driven, the frictional action of the shaft portion 6a by means of the belt 10 is started, and sufficient electric charge is charged to the ring 6. Thus, electric charge is charged onto stringy suspended matter 5a, and all the suspended matter 5a are sucked to the ring 6, and can completely be stuck and removed by its viscosity. And other noxious suspended matter can simultaneously be removed.
JP8286379A 1979-06-28 1979-06-28 Applying device for viscous liquid for semiconductor wafer Pending JPS567435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8286379A JPS567435A (en) 1979-06-28 1979-06-28 Applying device for viscous liquid for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8286379A JPS567435A (en) 1979-06-28 1979-06-28 Applying device for viscous liquid for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS567435A true JPS567435A (en) 1981-01-26

Family

ID=13786164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8286379A Pending JPS567435A (en) 1979-06-28 1979-06-28 Applying device for viscous liquid for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS567435A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741482A (en) * 1996-11-06 1998-04-21 Hercules Incorporated Air treatment gel compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741482A (en) * 1996-11-06 1998-04-21 Hercules Incorporated Air treatment gel compositions

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