JPS567292B1 - - Google Patents
Info
- Publication number
- JPS567292B1 JPS567292B1 JP3081069A JP3081069A JPS567292B1 JP S567292 B1 JPS567292 B1 JP S567292B1 JP 3081069 A JP3081069 A JP 3081069A JP 3081069 A JP3081069 A JP 3081069A JP S567292 B1 JPS567292 B1 JP S567292B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/028—Negative ion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
- H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/961—Ion beam source and generation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Electron Tubes For Measurement (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72302668A | 1968-04-22 | 1968-04-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS567292B1 true JPS567292B1 (fr) | 1981-02-17 |
Family
ID=24904500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3081069A Pending JPS567292B1 (fr) | 1968-04-22 | 1969-04-22 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3573454A (fr) |
JP (1) | JPS567292B1 (fr) |
DE (1) | DE1920183C3 (fr) |
FR (1) | FR2006648A1 (fr) |
GB (1) | GB1259505A (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3917491A (en) * | 1974-01-08 | 1975-11-04 | Us Army | Methods for fabricating resistant MOS devices |
US4110625A (en) * | 1976-12-20 | 1978-08-29 | International Business Machines Corporation | Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays |
USRE33344E (en) * | 1977-04-22 | 1990-09-18 | Finnigan Corporation | Apparatus and method for detecting negative ions |
US4132614A (en) * | 1977-10-26 | 1979-01-02 | International Business Machines Corporation | Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate |
US4416725A (en) * | 1982-12-30 | 1983-11-22 | International Business Machines Corporation | Copper texturing process |
GB8404173D0 (en) * | 1984-02-17 | 1984-03-21 | Ti Group Services Ltd | Controlling current density |
JP2568006B2 (ja) * | 1990-08-23 | 1996-12-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | イオン化空気により対象物から電荷を放電させる方法及びそのための装置 |
FR2806527B1 (fr) * | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
US11031205B1 (en) | 2020-02-04 | 2021-06-08 | Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin | Device for generating negative ions by impinging positive ions on a target |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2947868A (en) * | 1959-07-27 | 1960-08-02 | Geophysics Corp Of America | Mass spectrometer |
US3336475A (en) * | 1964-02-05 | 1967-08-15 | Electro Optical Systems Inc | Device for forming negative ions from iodine gas and a lanthanum boride contact ionizer surface |
US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
-
1968
- 1968-04-22 US US723026A patent/US3573454A/en not_active Expired - Lifetime
-
1969
- 1969-04-18 FR FR6912180A patent/FR2006648A1/fr not_active Withdrawn
- 1969-04-21 DE DE1920183A patent/DE1920183C3/de not_active Expired
- 1969-04-22 GB GB1259505D patent/GB1259505A/en not_active Expired
- 1969-04-22 JP JP3081069A patent/JPS567292B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1920183A1 (de) | 1970-08-27 |
US3573454A (en) | 1971-04-06 |
FR2006648A1 (fr) | 1970-01-02 |
DE1920183C3 (de) | 1981-10-29 |
DE1920183B2 (de) | 1977-02-10 |
GB1259505A (fr) | 1972-01-05 |