JPS5672529A - Gate reverse bias circuit of gate turnoff thyristor - Google Patents
Gate reverse bias circuit of gate turnoff thyristorInfo
- Publication number
- JPS5672529A JPS5672529A JP15018579A JP15018579A JPS5672529A JP S5672529 A JPS5672529 A JP S5672529A JP 15018579 A JP15018579 A JP 15018579A JP 15018579 A JP15018579 A JP 15018579A JP S5672529 A JPS5672529 A JP S5672529A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- zener
- voltage
- reverse bias
- bias circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0403—Modifications for accelerating switching in thyristor switches
Abstract
PURPOSE:To raise the gate reverse current and its elevating factor at the time of turnoff, and shorten the turnoff time, by using and amplifying a Zener current of the Zener diode used for the gate reverse bias circuit, so that large output voltage of the off-pulse generator can be used. CONSTITUTION:When the gate reverse bias voltage has exceeded the Zener voltage of the Zener diode 5, a Zener current flows through the rectifier diode 6, the Zener diode 5, the resistance 9 and the base and emitter of the transistor 7, and the transistor 7 is turned on. Therefore, the reverse voltage between the gate and the cathode of the gate turnoff thyristor 1 is clipped by the Zener voltage of the Zener diode 5, and the gate reverse voltage is not further applied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15018579A JPS5672529A (en) | 1979-11-19 | 1979-11-19 | Gate reverse bias circuit of gate turnoff thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15018579A JPS5672529A (en) | 1979-11-19 | 1979-11-19 | Gate reverse bias circuit of gate turnoff thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5672529A true JPS5672529A (en) | 1981-06-16 |
Family
ID=15491363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15018579A Pending JPS5672529A (en) | 1979-11-19 | 1979-11-19 | Gate reverse bias circuit of gate turnoff thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5672529A (en) |
-
1979
- 1979-11-19 JP JP15018579A patent/JPS5672529A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5292321A (en) | Power supply circuit | |
JPS5620314A (en) | Electric power amplifier | |
JPS5320844A (en) | Gain control circuit | |
JPS5672529A (en) | Gate reverse bias circuit of gate turnoff thyristor | |
JPS5358777A (en) | Semiconductor device | |
JPS561767A (en) | Gate circuit for thyristor | |
SU1188873A1 (en) | Method of power transistor switch control | |
JPS5515511A (en) | Constant current circuit | |
JPS5446352A (en) | Power source regulator circuit | |
JPS5743560A (en) | Gate circuit of gate turn-off thyristor | |
JPS52133761A (en) | Integrated circuit | |
SU560324A1 (en) | Odnovibrator | |
SU573853A1 (en) | Blocking oscillator | |
JPS5230385A (en) | Testing apparatus of increasing rate of voltage in the critical off-state when a state of a bipolar thyristor is changed | |
GB920816A (en) | Improvements in or relating to electric circuit arrangements incorporating semiconductor controlled rectifiers | |
JPS57208731A (en) | Gate circuit for gate turn-off thyristor | |
JPS5663620A (en) | Switching electric power source device | |
JPS57173559A (en) | Transistor ignition device | |
ES475477A1 (en) | Vertical deflection circuit control for TV receivers - has two diodes between transistor bases, shunted by capacitor, with one base connected through resistor to supply voltage | |
JPS57103356A (en) | Mos semiconductor device | |
JPS5335482A (en) | Bipolar semiconductor integrated circuit | |
JPS55110315A (en) | Constant current circuit | |
JPS5539457A (en) | Pulse generation circuit | |
JPS5513643A (en) | Driving circuit for semicondutor switch | |
JPS57192130A (en) | Gate circuit for gto thyristor |